公开(公告)号：US09257361B2

公开(公告)日：2016-02-09

申请号：US14532437

申请日：2014-11-04

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Mukta G. Farooq ,  Emily Kinser ,  JoAnn M. Rolick-DiGiacomio ,  Charu Tejwani

IPC: H01L21/44 ,  H01L23/38 ,  H01L23/367 ,  F25B21/02 ,  H01L23/48 ,  H01L27/06

CPC classification number: H01L23/38 ,  F25B21/02 ,  F25B2321/02 ,  H01L23/367 ,  H01L23/481 ,  H01L27/0688 ,  H01L2224/13

Abstract: Methods and structures for thermoelectric cooling of 3D semiconductor structures are disclosed. Thermoelectric vias (TEVs) to form a thermoelectric cooling structure. The TEVs are formed with an etch process similar to that used in forming electrically active through-silicon vias (TSVs). However, the etched cavities are filled with materials that exhibit the thermoelectric effect, instead of a conductive metal as with a traditional electrically active TSV. The thermoelectric materials are arranged such that when a voltage is applied to them, the thermoelectric cooling structure carries heat away from the interior of the structure from the junction where the thermoelectric materials are electrically connected.