公开(公告)号：US20150340461A1

公开(公告)日：2015-11-26

申请号：US14282257

申请日：2014-05-20

Applicant: GLOBALFOUNDRIES Inc

Inventor： Andy Chih-Hung Wei ,  Dae G. Yang ,  Mariappan Hariharaputhiran ,  Jing Wan

IPC: H01L29/66 ,  H01L29/49 ,  H01L29/78

CPC classification number: H01L29/785 ,  H01L21/28247 ,  H01L27/1104 ,  H01L29/4238 ,  H01L29/49 ,  H01L29/4958 ,  H01L29/4966 ,  H01L29/66 ,  H01L29/66545 ,  H01L29/66795

Abstract: Embodiments of the present invention provide a metal gate structure and method of formation. In the replacement metal gate (RMG) process flow, the gate cut process is performed after the metal gate is formed. This allows for a reduced margin between the end of the gate and an adjacent fin. It enables a thinner sacrificial layer on top of the dummy gate, since the gate cut step is deferred. The thinner sacrificial layer improves device quality by reducing the adverse effect of shadowing during implantation. Furthermore, in this process flow, the work function metal layer is terminated along the semiconductor substrate by a capping layer, which reduces undesirable shifts in threshold voltage that occurred in prior methods and structures.

Abstract translation: 本发明的实施例提供一种金属栅极结构和形成方法。 在替代金属栅极（RMG）工艺流程中，栅极切割工艺在金属栅极形成之后进行。 这允许在门的末端和相邻鳍之间减小边缘。 它能够在虚拟栅极顶部形成更薄的牺牲层，因为栅极切割步骤被推迟。 更薄的牺牲层通过减少植入期间阴影的不利影响来提高器件质量。 此外，在该工艺流程中，功函数金属层通过封盖层沿着半导体衬底终止，这降低了在现有方法和结构中发生的阈值电压的不期望的移动。

公开(公告)号：US20170162688A1

公开(公告)日：2017-06-08

申请号：US15433330

申请日：2017-02-15

Applicant: GLOBALFOUNDRIES INC.

Inventor： Andy Chih-Hung Wei ,  Dae G. Yang ,  Mariappan Hariharaputhiran ,  Jing Wan

IPC: H01L29/78 ,  H01L29/49 ,  H01L21/28 ,  H01L29/66 ,  H01L29/423

CPC classification number: H01L29/785 ,  H01L21/28247 ,  H01L27/1104 ,  H01L29/4238 ,  H01L29/49 ,  H01L29/4958 ,  H01L29/4966 ,  H01L29/66 ,  H01L29/66545 ,  H01L29/66795

Abstract: Embodiments of the present invention provide a metal gate structure and method of formation. In the replacement metal gate (RMG) process flow, the gate cut process is performed after the metal gate is formed. This allows for a reduced margin between the end of the gate and an adjacent fin. It enables a thinner sacrificial layer on top of the dummy gate, since the gate cut step is deferred. The thinner sacrificial layer improves device quality by reducing the adverse effect of shadowing during implantation. Furthermore, in this process flow, the work function metal layer is terminated along the semiconductor substrate by a capping layer, which reduces undesirable shifts in threshold voltage that occurred in prior methods and structures.

公开(公告)号：US09608086B2

公开(公告)日：2017-03-28

申请号：US14282257

申请日：2014-05-20

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Andy Chih-Hung Wei ,  Dae G. Yang ,  Mariappan Hariharaputhiran ,  Jing Wan

IPC: H01L21/336 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L29/785 ,  H01L21/28247 ,  H01L27/1104 ,  H01L29/4238 ,  H01L29/49 ,  H01L29/4958 ,  H01L29/4966 ,  H01L29/66 ,  H01L29/66545 ,  H01L29/66795

Abstract: Embodiments of the present invention provide a metal gate structure and method of formation. In the replacement metal gate (RMG) process flow, the gate cut process is performed after the metal gate is formed. This allows for a reduced margin between the end of the gate and an adjacent fin. It enables a thinner sacrificial layer on top of the dummy gate, since the gate cut step is deferred. The thinner sacrificial layer improves device quality by reducing the adverse effect of shadowing during implantation. Furthermore, in this process flow, the work function metal layer is terminated along the semiconductor substrate by a capping layer, which reduces undesirable shifts in threshold voltage that occurred in prior methods and structures.