公开(公告)号：US20180254239A1

公开(公告)日：2018-09-06

申请号：US15446109

申请日：2017-03-01

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Vijay SUKUMARAN ,  Ivan Junju HUANG ,  Saket CHADDA ,  Elavarasan T. PANNERSELVAM ,  Chok W. HO

IPC: H01L23/498 ,  H01L21/48

CPC classification number: H01L23/49827 ,  H01L21/486 ,  H01L23/15

Abstract: Methods for reliable interconnect structures between thin metal capture pads and TGV metallization and resulting devices are provided. Embodiments include forming a TGV in a glass substrate; filling with metal conductive paste; forming a metal layer on top and bottom surfaces of the substrate; patterning the metal layer, leaving at least a portion over the TGV top surface and an area surrounding the TGV; forming a dielectric layer on the metal layer and on the substrate top and bottom surfaces; patterning the dielectric layer, including exposing the metal layer over the TGV top surface and the area surrounding the TGV; forming a second metal layer on the dielectric layer and on the exposed portion of the first metal layer over the TGV top surface and the area surrounding the TGV; patterning the second metal layer exposing the dielectric layer; and forming a third metal layer on the second metal layer.