公开(公告)号：US20180182671A1

公开(公告)日：2018-06-28

申请号：US15858691

申请日：2017-12-29

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Ivan HUANG ,  Elavarasan PANNERSELVAM ,  Vijay SUKUMARAN

IPC: H01L21/78 ,  H01L21/027 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/263 ,  H01L21/56 ,  H01L23/00 ,  H01L21/268

CPC classification number: H01L21/78 ,  H01L21/02118 ,  H01L21/0273 ,  H01L21/2633 ,  H01L21/268 ,  H01L21/3065 ,  H01L21/561 ,  H01L23/562

Abstract: A method of forming a 3D crack-stop structure in, through, and wrapped around the edges of a substrate to prevent through-substrate cracks from propagating and breaking the substrate and the resulting device are provided. Embodiments include providing a substrate including one or more dies; forming a continuous first trench near an outer edge of the substrate; forming a continuous second trench parallel to and on an opposite side of the first trench from the outer edge; forming a continuous row of vias parallel to and on an opposite side of the second trench from the first trench, forming a continuous third trench parallel to and near an outer edge of each of the dies; forming a protective layer wrapping around the outer edge of the substrate and over and filling the trenches and vias; and patterning active areas of the substrate between the vias and the third trench.

公开(公告)号：US20180254239A1

公开(公告)日：2018-09-06

申请号：US15446109

申请日：2017-03-01

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Vijay SUKUMARAN ,  Ivan Junju HUANG ,  Saket CHADDA ,  Elavarasan T. PANNERSELVAM ,  Chok W. HO

IPC: H01L23/498 ,  H01L21/48

CPC classification number: H01L23/49827 ,  H01L21/486 ,  H01L23/15

Abstract: Methods for reliable interconnect structures between thin metal capture pads and TGV metallization and resulting devices are provided. Embodiments include forming a TGV in a glass substrate; filling with metal conductive paste; forming a metal layer on top and bottom surfaces of the substrate; patterning the metal layer, leaving at least a portion over the TGV top surface and an area surrounding the TGV; forming a dielectric layer on the metal layer and on the substrate top and bottom surfaces; patterning the dielectric layer, including exposing the metal layer over the TGV top surface and the area surrounding the TGV; forming a second metal layer on the dielectric layer and on the exposed portion of the first metal layer over the TGV top surface and the area surrounding the TGV; patterning the second metal layer exposing the dielectric layer; and forming a third metal layer on the second metal layer.