公开(公告)号：US20160260675A1

公开(公告)日：2016-09-08

申请号：US14637448

申请日：2015-03-04

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Ivan Junju HUANG

IPC: H01L23/00 ,  H01L21/3065 ,  H01L21/263 ,  H01L21/304

CPC classification number: H01L23/562

Abstract: A method of forming slots into a substrate surrounding via interconnects at the periphery of a die to create a standoff between mismatched materials and the resulting device are provided. Embodiments include providing a substrate including one or more dies; providing via interconnects at a periphery of at least one die; and forming parallel trenches in the substrate on opposite sides of each via interconnect.

Abstract translation: 提供了一种在芯片周边通过互连件形成槽的衬底的方法，以在不匹配的材料和所得到的器件之间产生间隔。 实施例包括提供包括一个或多个管芯的衬底; 在至少一个管芯的周围经由互连件提供; 以及在每个通孔互连的相对侧上的衬底中形成平行的沟槽。

公开(公告)号：US20180254239A1

公开(公告)日：2018-09-06

申请号：US15446109

申请日：2017-03-01

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Vijay SUKUMARAN ,  Ivan Junju HUANG ,  Saket CHADDA ,  Elavarasan T. PANNERSELVAM ,  Chok W. HO

IPC: H01L23/498 ,  H01L21/48

CPC classification number: H01L23/49827 ,  H01L21/486 ,  H01L23/15

Abstract: Methods for reliable interconnect structures between thin metal capture pads and TGV metallization and resulting devices are provided. Embodiments include forming a TGV in a glass substrate; filling with metal conductive paste; forming a metal layer on top and bottom surfaces of the substrate; patterning the metal layer, leaving at least a portion over the TGV top surface and an area surrounding the TGV; forming a dielectric layer on the metal layer and on the substrate top and bottom surfaces; patterning the dielectric layer, including exposing the metal layer over the TGV top surface and the area surrounding the TGV; forming a second metal layer on the dielectric layer and on the exposed portion of the first metal layer over the TGV top surface and the area surrounding the TGV; patterning the second metal layer exposing the dielectric layer; and forming a third metal layer on the second metal layer.