公开(公告)号：US20160284540A1

公开(公告)日：2016-09-29

申请号：US14666787

申请日：2015-03-24

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Shishir RAY ,  Yiqun LIU ,  Jin Ping LIU ,  Fabio D'ADDAMIO ,  Sandeep GAAN

IPC: H01L21/02 ,  H01L29/06 ,  H01L29/12

CPC classification number: H01L21/02181 ,  C23C16/308 ,  G11C11/22 ,  H01L21/02189 ,  H01L21/0234 ,  H01L21/28185 ,  H01L21/28194 ,  H01L29/513 ,  H01L29/517

Abstract: Provided is a semiconductor device that includes a semiconductor substrate and a 10 to 40 Å thick high-k dielectric layer that contains one or both of hafnium dioxide (HfO2) and zirconium dioxide (ZrO2). The high-k dielectric layer is disposed on the semiconductor substrate, and it contains at least some tetragonal phase HfO2 and/or tetragonal phase ZrO2. Also provided are methods for making the semiconductor device, and electronic devices that employ the semiconductor device.

Abstract translation: 提供了一种半导体器件，其包括半导体衬底和包含二氧化铪（HfO 2）和二氧化锆（ZrO 2）中的一种或两者的10至40厚的高k电介质层。 高k电介质层设置在半导体衬底上，并且其包含至少一些四方相HfO 2和/或四方相ZrO 2。 还提供了制造半导体器件的方法以及采用该半导体器件的电子器件。