公开(公告)号：US20140349479A1

公开(公告)日：2014-11-27

申请号：US13901778

申请日：2013-05-24

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Oliver Mieth ,  Torsten Huisinga ,  Carsten Peters ,  Bernd Hintze ,  Grit Bonsdorf

IPC: H01L21/768

CPC classification number: H01L21/76897 ,  C23F1/32 ,  C23F1/38 ,  H01L21/02063 ,  H01L21/31144 ,  H01L21/32134 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/76814

Abstract: A method includes providing a semiconductor structure. The semiconductor structure includes an electrically conductive feature including a first metal, a dielectric material provided over the electrically conductive feature and a hardmask. The hardmask includes a hardmask material and is provided over the dielectric material. An opening is provided in the interlayer dielectric and the hardmask. A portion of the electrically conductive feature is exposed at a bottom of the opening. The hardmask is removed. The removal of the hardmask includes exposing the semiconductor structure to an etching solution including hydrogen peroxide and a corrosion inhibitor. After the removal of the hardmask, the semiconductor structure is rinsed. Rinsing the semiconductor structure includes exposing the semiconductor structure to an alkaline rinse solution.

Abstract translation: 一种方法包括提供半导体结构。 半导体结构包括导电特征，其包括第一金属，设置在导电特征上的介电材料和硬掩模。 硬掩模包括硬掩模材料并且设置在电介质材料上。 在层间电介质和硬掩模中设置开口。 导电特征的一部分暴露在开口的底部。 硬掩模被删除。 去除硬掩模包括将半导体结构暴露于包括过氧化氢和腐蚀抑制剂的蚀刻溶液。 在去除硬掩模之后，冲洗半导体结构。 冲洗半导体结构包括将半导体结构暴露于碱性冲洗溶液中。