公开(公告)号：US20150275361A1

公开(公告)日：2015-10-01

申请号：US14619474

申请日：2015-02-11

申请人： Applied Materials, Inc.

发明人： Dmitry Lubomirsky ,  Sung Je Kim

IPC分类号： C23C16/455 ,  H01J37/32 ,  C23C14/22 ,  C23C16/50 ,  H01L21/67 ,  H01L21/673

CPC分类号： C23C22/66 ,  C23C14/22 ,  C23C16/45525 ,  C23C16/45527 ,  C23C16/50 ,  C23C22/56 ,  C23F1/16 ,  C23F1/20 ,  C23F1/32 ,  C23F1/36 ,  H01J37/32009 ,  H01J37/3244 ,  H01J37/32532 ,  H01J37/3255 ,  H01L21/67069 ,  H01L21/67248 ,  H01L21/67253 ,  H01L21/67306 ,  Y10T428/24322 ,  Y10T428/24355

摘要： A method for conditioning a semiconductor chamber component may include passivating the chamber component with an oxidizer. The method may also include performing a number of chamber process operation cycles in a semiconductor processing chamber housing the chamber component until the process is stabilized. The number of chamber operation cycles to stabilize the process may be less than 10% of the amount otherwise used with conventional techniques.

摘要翻译： 用于调节半导体室部件的方法可以包括用氧化器钝化室部件。 该方法还可以包括在容纳室部件的半导体处理室中执行多个室过程操作循环，直到过程稳定。 用于稳定该方法的室操作循环的数量可以小于用常规技术使用的量的10％。

公开(公告)号：US09070625B2

公开(公告)日：2015-06-30

申请号：US13828650

申请日：2013-03-14

申请人： International Business Machines Corporation

发明人： John A. Fitzsimmons ,  David L. Rath ,  Muthumanickam Sankarapandian

IPC分类号： H01L21/283 ,  H01L21/8238 ,  H01L21/3213 ,  C23F1/02 ,  C23F1/32 ,  C23G1/20

CPC分类号： C23F1/40 ,  C09K13/00 ,  C23F1/02 ,  C23F1/32 ,  C23G1/205 ,  H01L21/283 ,  H01L21/32134 ,  H01L21/823842

摘要： A chemical solution including an aqueous solution, an oxidizing agent, and a pH stabilizer selected from quaternary ammonium salts and quaternary ammonium alkali can be employed to remove metallic materials in cavities for forming a semiconductor device. For example, metallic materials in gate cavities for forming a replacement gate structure can be removed by the chemical solution of the present disclosure with, or without, selectivity among multiple metallic materials such as work function materials. The chemical solution of the present disclosure provides different selectivity among metallic materials than known etchants in the art.

摘要翻译： 可以使用包含水溶液，氧化剂和选自季铵盐和季铵碱的pH稳定剂的化学溶液来除去用于形成半导体器件的空腔中的金属材料。 例如，用于形成替代栅极结构的栅极腔中的金属材料可以通过本发明的化学溶液被去除，或者在多种金属材料如功函数材料中具有或不具有选择性。 本公开的化学溶液在金属材料中提供与本领域中已知的蚀刻剂不同的选择性。

公开(公告)号：US20120312784A1

公开(公告)日：2012-12-13

申请号：US13580111

申请日：2010-11-08

申请人： Ryo Ogushi ,  Minoru Otani

发明人： Ryo Ogushi ,  Minoru Otani

IPC分类号： C23F1/36 ,  C23F1/20

CPC分类号： C23F1/36 ,  C09K13/00 ,  C09K13/02 ,  C23F1/00 ,  C23F1/14 ,  C23F1/32

摘要： Provided are a surface roughening agent for aluminum and a surface roughening method using said surface roughening agent wherein it is possible to easily reduce costs for the surface roughening step and to improve the adhesiveness between aluminum and a resin. Specifically, provided is a surface roughening agent for aluminum comprising an aqueous solution containing: an alkali source, an amphoteric metal ion, a nitrate ion, and a thio compound. Moreover, provided is a surface roughening method for aluminum which involves a surface roughening step in which the surface of aluminum is treated with the aforementioned surface roughening agent.

摘要翻译： 提供了一种铝的表面粗糙剂和使用所述表面粗糙剂的表面粗糙化方法，其中可以容易地降低表面粗糙化步骤的成本并改善铝和树脂之间的粘附性。 具体地，提供一种铝的表面粗糙剂，其包含含有碱源，两性金属离子，硝酸根离子和硫代化合物的水溶液。 此外，提供了一种铝的表面粗糙化方法，其包括用上述表面粗糙剂处理铝的表面的表面粗糙化步骤。

公开(公告)号：US07824505B2

公开(公告)日：2010-11-02

申请号：US11493053

申请日：2006-07-26

申请人： Niraj Rana ,  Kevin R. Shea

发明人： Niraj Rana ,  Kevin R. Shea

IPC分类号： B08B3/00 ,  B08B7/00

CPC分类号： H01L21/02063 ,  B08B3/08 ,  C23F1/32 ,  C23F4/00

摘要： A method of removing a mask and addressing interfacial carbon chemisorbed in a semiconductor wafer starts with placing the semiconductor wafer into a dry strip chamber. The dry stripping process is performed to remove the mask on the semiconductor wafer. The semiconductor wafer is then subjected to a cleaning solution to perform a cleaning process to remove particles on the surface of the semiconductor wafer and to address the interfacial carbon. The cleaning solution being either water containing ozone (O3) and ammonia (NH3), or a solution of hot phosphoric acid (H3PO4).

摘要翻译： 在半导体晶片中化学吸附的掩模和去除界面碳的方法首先将半导体晶片放入干燥条形室中。 执行干燥剥离处理以去除半导体晶片上的掩模。 然后对半导体晶片进行清洁溶液以进行清洁处理以去除半导体晶片的表面上的颗粒并解决界面碳。 清洁溶液是含臭氧（O3）和氨（NH3）的水，或热磷酸（H 3 PO 4）的溶液。

公开(公告)号：US20030034324A1

公开(公告)日：2003-02-20

申请号：US09923447

申请日：2001-08-08

申请人： TDK CORPORATION

发明人： Kunihiro Ueda ,  Tetsuya Kuwashima ,  Shunji Saruki

IPC分类号： B44C001/22

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  C23F1/16 ,  C23F1/28 ,  C23F1/32 ,  C23G1/02 ,  C23G1/06 ,  C23G1/18 ,  G11B5/105 ,  G11B5/3116 ,  G11B5/3163 ,  G11B5/3169 ,  G11B5/3173 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3967 ,  H01L43/12

摘要： According to the present invention, a reproducing head having an MR film is formed on a substrate (step S102) and a recording head is formed (step S103). The MR film is formed by sequentially forming an antiferromagnetic layer, a first ferromagnetic layer, a tunnel barrier layer, and a second ferromagnetic layer. Subsequently, the end face perpendicular to an extending surface of the MR film is subjected to mechanical polishing to adjust the element height (step S105). The mechanically polished face is subjected to wet etching to remove residues of the mechanical polishing (step S106). Consequently, an electric short circuit in a tunnel barrier layer caused by residues at the time of polishing can be prevented, damage to the tunnel barrier layer and the recording head caused by the etching can be reduced, and a step in the substrate, the reproducing head, and the recording head can be made smaller as compared with the case of dry etching.

摘要翻译： 根据本发明，在基板上形成具有MR膜的再现头（步骤S102），形成记录头（步骤S103）。 MR膜通过顺序形成反铁磁层，第一铁磁层，隧道势垒层和第二铁磁层形成。 随后，对垂直于MR膜的延伸表面的端面进行机械抛光以调节元件高度（步骤S105）。 对机械抛光的表面进行湿蚀刻以除去机械抛光的残留物（步骤S106）。 因此，可以防止在抛光时由残留物引起的隧道势垒层中的电短路，可以减少由蚀刻导致的隧道势垒层和记录头的损伤，并且衬底中的步骤，再现 头部，并且与干蚀刻的情况相比，可以使记录头更小。

公开(公告)号：US3753818A

公开(公告)日：1973-08-21

申请号：US3753818D

申请日：1972-01-26

申请人： CONVERSION CHEM CORP

发明人： POOR J ,  HSU G

IPC分类号： C23F1/32 ,  H05K3/06 ,  C23G1/18

CPC分类号： C23F1/32 ,  H05K3/067

摘要： An aqueous ammoniacal etching solution for metallic surfaces contains, at makeup, ammonium haloacetate, ammonium hydroxide, and a promoter selected from the group consisting of soluble iodide, bromide and noble metal compounds; preferably, the solution also contains a soluble cupric compound. The solution may be used for spray or immersion etching of copper, cadmium, zinc, aluminum and alloys of such metals.

摘要翻译： 用于金属表面的含水氨蚀刻溶液在组成时包含卤代乙酸铵，氢氧化铵和选自可溶性碘化物，溴化物和贵金属化合物的促进剂; 优选地，溶液还含有可溶性铜化合物。 该溶液可用于铜，镉，锌，铝和这些金属的合金的喷涂或浸渍蚀刻。

公开(公告)号：US10060037B2

公开(公告)日：2018-08-28

申请号：US15137935

申请日：2016-04-25

申请人： ECORENEW DMCC

发明人： Reybert L. Trinidad ,  Jose Mari I. Omni-On ,  Orville T. Padaon

IPC分类号： B44C1/22 ,  C23F1/32 ,  B23K26/00 ,  C25D5/02 ,  C25D5/06 ,  C25D5/48 ,  C25D11/18 ,  C25D11/24 ,  C23C18/54 ,  C23F1/02 ,  B23K26/352 ,  B23K101/34 ,  B23K101/36 ,  B23K103/10

CPC分类号： C23F1/32 ,  B23K26/0006 ,  B23K26/352 ,  B23K26/355 ,  B23K2101/34 ,  B23K2101/35 ,  B23K2101/36 ,  B23K2103/10 ,  B44C1/227 ,  C23C18/54 ,  C23F1/02 ,  C25D5/02 ,  C25D5/06 ,  C25D5/48 ,  C25D11/18 ,  C25D11/24

摘要： The present invention relates to a method for preserving a mark on a metallic workpiece prior to a chemical etching process to remove a surface material from a surface of the workpiece carrying the mark, the method comprising the steps of: deepening the mark relative to the surface to form a first depth; and depositing a filling material into the first depth, wherein the filling material is adapted to be removed during the chemical process, such that a second depth is obtained at the mark after the chemical process. The present invention also relates to a method of treating a metallic workpiece to preserve a mark on the surface of the workpiece, the method comprising the step of treating at least a portion of the surface of the workpiece surrounding the mark to remove at least a surface oxide layer from the mark, the treating step being arranged such that it does not remove all of the surface material from said portion of the surface of the workpiece, but removes at least the surface oxide layer from the mark.

公开(公告)号：US20170287699A1

公开(公告)日：2017-10-05

申请号：US15464679

申请日：2017-03-21

申请人： Tokyo Electron Limited

发明人： Akira Fujita ,  Tsuyoshi Mizuno

IPC分类号： H01L21/02 ,  C23F1/32 ,  B08B3/08 ,  H01L21/687 ,  H01L21/66 ,  B08B3/04 ,  C23F1/16 ,  H01L21/67

CPC分类号： H01L21/02052 ,  B08B3/02 ,  B08B3/041 ,  B08B3/08 ,  C23F1/02 ,  C23F1/08 ,  C23F1/16 ,  C23F1/32 ,  G03F7/168 ,  H01L21/02087 ,  H01L21/67051 ,  H01L21/67253 ,  H01L21/68764 ,  H01L22/12 ,  H01L22/20

摘要： Provided is a substrate processing apparatus that removes a film by supplying a processing liquid to the peripheral edge of a substrate. An ejection unit ejects the processing liquid to the peripheral edge of the substrate held and rotated by a substrate holding unit. An ejection position setting unit sets the ejection position of the processing liquid of the ejection unit to correspond to the removal width of the film included in a recipe, and a property information acquisition unit acquires property information of the film to be removed. A correction amount acquisition unit acquires the correction amount for correcting the ejection position of the processing liquid based on the property information of the film, and an ejection position correction unit corrects the ejection position of the processing liquid by the ejection unit based on the correction amount acquired by the correction amount acquisition unit.

公开(公告)号：US20170060282A1

公开(公告)日：2017-03-02

申请号：US15120576

申请日：2015-01-30

申请人： 3M INNOVATIVE PROPERTIES COMPANY

发明人： Muthu Sebastian

IPC分类号： G06F3/041 ,  H05K3/06 ,  C23F1/32

CPC分类号： G06F3/041 ,  C23F1/32 ,  G06F3/044 ,  G06F2203/04103 ,  H05K3/061 ,  H05K3/067 ,  H05K2203/0793

摘要： The invention relates to a method of etching a portion of a metal layer of a microstructure comprised of the metal layer disposed on a transparent conducting oxide (TCO) layer, and in particular, to selectively etching the portion of the metal layer and not the TCO layer.

摘要翻译： 本发明涉及一种蚀刻由透明导电氧化物（TCO）层上设置的金属层构成的微结构金属层的一部分的方法，特别是选择性地蚀刻金属层的部分而不是TCO 层。

公开(公告)号：US20160258299A1

公开(公告)日：2016-09-08

申请号：US15037013

申请日：2014-11-14

申请人： UNITED TECHNOLOGIES CORPORATION

发明人： Sasha M. Moore ,  Thomas N. Slavens ,  Nicholas M. Loricco ,  Timothy J. Jennings

IPC分类号： F01D5/18 ,  F01D11/08 ,  C23F1/32 ,  B24C3/32 ,  C23F1/16 ,  F01D9/02 ,  F01D25/12

CPC分类号： F01D5/187 ,  B24C3/327 ,  C23F1/16 ,  C23F1/32 ,  F01D9/02 ,  F01D11/08 ,  F01D25/12 ,  F05D2220/32 ,  F05D2230/10 ,  F05D2300/506 ,  Y02T50/673 ,  Y02T50/676

摘要： One exemplary embodiment of this disclosure relates to a method of forming an engine component. The method includes forming an engine component having an internal passageway, the internal passageway formed with an initial dimension. The method further includes establishing a flow of machining fluid within the internal passageway, the machining fluid changing the initial dimension.

摘要翻译： 本公开的一个示例性实施例涉及形成发动机部件的方法。 该方法包括形成具有内部通道的发动机部件，内部通路形成初始尺寸。 该方法还包括在内部通道内建立加工流体的流动，所述加工流体改变初始尺寸。