公开(公告)号：US20150278426A1

公开(公告)日：2015-10-01

申请号：US14228611

申请日：2014-03-28

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Guoxiang NING ,  Guido UEBERREITER ,  Lloyd C. LITT ,  Paul ACKMANN

IPC: G06F17/50

CPC classification number: G06F17/5081 ,  G03F1/36 ,  G03F1/68 ,  G03F7/70441 ,  G03F7/70516 ,  G03F7/70625 ,  G03F7/70683 ,  G06F17/5072

Abstract: A metrology pattern layout for a circuit structure is provided, the metrology pattern layout including a plurality of quadrants, in which quadrants a first wafer measurement pattern, a second wafer measurement pattern, a reticle registration pattern, and a reticle measurement pattern may be arranged to facilitate correlation of reticle metrology data with wafer metrology data. The reticle registration pattern may further include one or more outermost structural elements designed to protect other structural elements within the reticle measurement pattern from being modified in an optical proximity correction process. A method of optical proximity correction process is provided, in which a reticle measurement pattern may be obtained and classified to add or modify a rule set of the optical proximity correction process.

Abstract translation: 提供了一种用于电路结构的度量图案布局，包括多个象限的计量图案布局，其中象限第一晶片测量图案，第二晶片测量图案，标线片配准图案和标线片测量图案可以布置成 有助于光栅测量数据与晶圆计量数据的相关性。 标线片配准图案还可以包括被设计成保护掩模版测量图案内的其它结构元件的一个或多个最外面的结构元件在光学邻近校正过程中被修改。 提供了一种光学邻近校正处理方法，其中可以获得分划板测量图案并将其分类以添加或修改光学邻近校正处理的规则集。

公开(公告)号：US20160196381A1

公开(公告)日：2016-07-07

申请号：US15071890

申请日：2016-03-16

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Guoxiang NING ,  Guido UEBERREITER ,  Llyod C. LITT ,  Paul ACKMANN

IPC: G06F17/50 ,  G03F1/36

CPC classification number: G06F17/5081 ,  G03F1/36 ,  G03F1/68 ,  G03F7/70441 ,  G03F7/70516 ,  G03F7/70625 ,  G03F7/70683 ,  G06F17/5072

Abstract: A metrology pattern layout for a circuit structure is provided, the metrology pattern layout including a plurality of quadrants, in which quadrants a first wafer measurement pattern, a second wafer measurement pattern, a reticle registration pattern, and a reticle measurement pattern may be arranged to facilitate correlation of reticle metrology data with wafer metrology data. The reticle registration pattern may further include one or more outermost structural elements designed to protect other structural elements within the reticle measurement pattern from being modified in an optical proximity correction process. A method of optical proximity correction process is provided, in which a reticle measurement pattern may be obtained and classified to add or modify a rule set of the optical proximity correction process.