公开(公告)号：US10347531B2

公开(公告)日：2019-07-09

申请号：US15438828

申请日：2017-02-22

Applicant: GLOBALFOUNDRIES INC.

Inventor： Sipeng Gu ,  Xusheng Wu ,  Xinyuan Dou ,  Xiaobo Chen ,  Guoliang Zhu ,  Wenhe Lin ,  Jeffrey Chee

IPC: H01L21/768 ,  H01L23/535 ,  H01L23/532

Abstract: Disclosed are a method of forming an integrated circuit (IC) structure with robust metal plugs and the resulting IC structure. In the method, openings are formed in an interlayer dielectric layer to expose semiconductor device surfaces. The openings are lined with a two-layer liner, which includes conformal metal and barrier layers, and subsequently filled with a metal layer. However, instead of waiting until after the liner is formed to perform a silicidation anneal, as is conventionally done, the silicidation anneal is performed between deposition of the two liner layers. This is particularly useful because, as determined by the inventors, performing the silicidation anneal prior to depositing the conformal barrier layer prevents the formation of microcracks in the conformal barrier layer. Prevention of such microcracks, in turn, prevents any metal from the metal layer from protruding into the area between the two liner layers and/or completely through the liner.

公开(公告)号：US20200350202A1

公开(公告)日：2020-11-05

申请号：US16400481

申请日：2019-05-01

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Xiaoming Yang ,  Haiting Wang ,  Hong Yu ,  Jeffrey Chee ,  Guoliang Zhu

IPC: H01L21/768 ,  H01L23/528 ,  H01L23/522 ,  H01L21/033

Abstract: Methods of forming interconnects and structures for interconnects. A hardmask layer is patterned to form a plurality of first trenches arranged with a first pattern, and sidewall spacers are formed inside the first trenches on respective sidewalls of the hardmask layer bordering the first trenches. An etch mask is formed over the hardmask layer. The etch mask includes an opening exposing a portion of the hardmask layer between a pair of the sidewall spacers. The portion of the hardmask layer exposed by the opening in the etch mask is removed to define a second trench in the hardmask layer.