公开(公告)号：US10347531B2

公开(公告)日：2019-07-09

申请号：US15438828

申请日：2017-02-22

申请人： GLOBALFOUNDRIES INC.

发明人： Sipeng Gu ,  Xusheng Wu ,  Xinyuan Dou ,  Xiaobo Chen ,  Guoliang Zhu ,  Wenhe Lin ,  Jeffrey Chee

IPC分类号： H01L21/768 ,  H01L23/535 ,  H01L23/532

摘要： Disclosed are a method of forming an integrated circuit (IC) structure with robust metal plugs and the resulting IC structure. In the method, openings are formed in an interlayer dielectric layer to expose semiconductor device surfaces. The openings are lined with a two-layer liner, which includes conformal metal and barrier layers, and subsequently filled with a metal layer. However, instead of waiting until after the liner is formed to perform a silicidation anneal, as is conventionally done, the silicidation anneal is performed between deposition of the two liner layers. This is particularly useful because, as determined by the inventors, performing the silicidation anneal prior to depositing the conformal barrier layer prevents the formation of microcracks in the conformal barrier layer. Prevention of such microcracks, in turn, prevents any metal from the metal layer from protruding into the area between the two liner layers and/or completely through the liner.

公开(公告)号：US10026818B1

公开(公告)日：2018-07-17

申请号：US15410159

申请日：2017-01-19

申请人： GLOBALFOUNDRIES INC.

发明人： Sipeng Gu ,  Xusheng Wu ,  Wenhe Lin ,  Jeffrey Chee

IPC分类号： H01L29/66 ,  H01L29/417 ,  H01L21/321 ,  H01L29/78 ,  H01L29/08 ,  H01L21/265

摘要： Disclosed are a field effect transistor (FET) and a FET formation method. In the FET, an interlayer dielectric (ILD) layer is positioned laterally adjacent to a sidewall spacer of a replacement metal gate and a cap layer covers the ILD layer, the sidewall spacer and the gate. However, during processing after the gate is formed but before the cap layer is formed, the ILD layer is polished and then recessed such that the top surface of the ILD layer is lower than the top surfaces of the sidewall spacer and the gate. The cap layer is then deposited such that the cap layer is, not only above the top surfaces of the ILD layer, sidewall spacer and gate, but also positioned laterally adjacent to a vertical surface of the sidewall spacer. Recessing the ILD layer prevents shorts between the gate and subsequently formed contacts to the FET source/drain regions.

公开(公告)号：US10446483B2

公开(公告)日：2019-10-15

申请号：US15872589

申请日：2018-01-16

申请人： GLOBALFOUNDRIES Inc.

发明人： Sipeng Gu ,  Jianwei Peng ,  Xusheng Wu ,  Yi Qi ,  Jeffrey Chee

IPC分类号： H01L23/522 ,  H01L49/02 ,  H01L21/768

摘要： Structures that include a metal-insulator-metal (MIM) capacitor and methods for fabricating a structure that includes a MIM capacitor. The MIM capacitor includes a first electrode, a second electrode, and a third electrode. A conductive via is arranged in a via opening extending in a vertical direction through at least the first electrode. The first electrode has a surface arranged inside the via opening in a plane transverse to the vertical direction, and the conductive via contacts the first electrode over an area of the surface.

公开(公告)号：US20200350202A1

公开(公告)日：2020-11-05

申请号：US16400481

申请日：2019-05-01

申请人： GLOBALFOUNDRIES Inc.

发明人： Xiaoming Yang ,  Haiting Wang ,  Hong Yu ,  Jeffrey Chee ,  Guoliang Zhu

IPC分类号： H01L21/768 ,  H01L23/528 ,  H01L23/522 ,  H01L21/033

摘要： Methods of forming interconnects and structures for interconnects. A hardmask layer is patterned to form a plurality of first trenches arranged with a first pattern, and sidewall spacers are formed inside the first trenches on respective sidewalls of the hardmask layer bordering the first trenches. An etch mask is formed over the hardmask layer. The etch mask includes an opening exposing a portion of the hardmask layer between a pair of the sidewall spacers. The portion of the hardmask layer exposed by the opening in the etch mask is removed to define a second trench in the hardmask layer.

公开(公告)号：US10825811B2

公开(公告)日：2020-11-03

申请号：US16280343

申请日：2019-02-20

申请人： GLOBALFOUNDRIES INC.

发明人： Xiaoming Yang ,  Sipeng Gu ,  Jeffrey Chee ,  Keith H. Tabakman

IPC分类号： H01L27/092 ,  H01L29/66 ,  H01L29/423 ,  H01L29/06 ,  H01L21/768 ,  H01L21/8234 ,  H01L21/311 ,  H01L21/762 ,  H01L21/02

摘要： A method, FET structure and gate cut structure are disclosed. The method forms a gate cut opening in a dummy gate in a gate material layer, the gate cut opening extending into a space separating a semiconductor structures on a substrate under the gate material layer. A source/drain region is formed on the semiconductor structure(s), and a gate cut isolation is formed in the gate cut opening. The gate cut isolation may include an oxide body. During forming of a contact, a mask has a portion covering an upper end of the gate cut isolation to protect it. The gate cut structure includes a gate cut isolation including a nitride liner contacting the end of the first metal gate conductor and the end of the second metal gate conductor, and an oxide body inside the nitride liner.

公开(公告)号：US20200266286A1

公开(公告)日：2020-08-20

申请号：US16280343

申请日：2019-02-20

申请人： GLOBALFOUNDRIES INC.

发明人： Xiaoming Yang ,  Sipeng Gu ,  Jeffrey Chee ,  Keith H. Tabakman

IPC分类号： H01L29/66 ,  H01L29/423 ,  H01L29/06 ,  H01L21/768 ,  H01L21/8234 ,  H01L21/311

摘要： A method, FET structure and gate cut structure are disclosed. The method forms a gate cut opening in a dummy gate in a gate material layer, the gate cut opening extending into a space separating a semiconductor structures on a substrate under the gate material layer. A source/drain region is formed on the semiconductor structure(s), and a gate cut isolation is formed in the gate cut opening. The gate cut isolation may include an oxide body. During forming of a contact, a mask has a portion covering an upper end of the gate cut isolation to protect it. The gate cut structure includes a gate cut isolation including a nitride liner contacting the end of the first metal gate conductor and the end of the second metal gate conductor, and an oxide body inside the nitride liner.

公开(公告)号：US20190221515A1

公开(公告)日：2019-07-18

申请号：US15872589

申请日：2018-01-16

申请人： GLOBALFOUNDRIES Inc.

发明人： Sipeng Gu ,  Jianwei Peng ,  Xusheng Wu ,  Yi Qi ,  Jeffrey Chee

IPC分类号： H01L23/522 ,  H01L49/02 ,  H01L21/768

摘要： Structures that include a metal-insulator-metal (MIM) capacitor and methods for fabricating a structure that includes a MIM capacitor. The MIM capacitor includes a first electrode, a second electrode, and a third electrode. A conductive via is arranged in a via opening extending in a vertical direction through at least the first electrode. The first electrode has a surface arranged inside the via opening in a plane transverse to the vertical direction, and the conductive via contacts the first electrode over an area of the surface.