公开(公告)号：US10319732B2

公开(公告)日：2019-06-11

申请号：US15622497

申请日：2017-06-14

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Ralf Richter ,  Jochen Willi. Poth ,  Sven Beyer ,  Stefan Duenkel ,  Sandhya Chandrashekhar ,  Zhi-Yuan Wu

IPC: H01L27/11568 ,  H01L29/06 ,  H01L29/423 ,  H01L29/792 ,  H01L29/66 ,  H01L21/84 ,  H01L29/786

Abstract: In sophisticated SOI transistor elements, the buried insulating layer may be specifically engineered so as to include non-standard dielectric materials. For instance, a charge-trapping material and/or a high-k dielectric material and/or a ferroelectric material may be incorporated into the buried insulating layer. In this manner, non-volatile storage transistor elements with superior performance may be obtained and/or efficiency of a back-bias mechanism may be improved.

公开(公告)号：US20180366484A1

公开(公告)日：2018-12-20

申请号：US15622497

申请日：2017-06-14

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Ralf Richter ,  Jochen Willi. Poth ,  Sven Beyer ,  Stefan Duenkel ,  Sandhya Chandrashekhar ,  Zhi-Yuan Wu

IPC: H01L27/11568 ,  H01L29/06 ,  H01L29/423 ,  H01L29/792 ,  H01L29/66

CPC classification number: H01L27/11568 ,  H01L21/84 ,  H01L29/0649 ,  H01L29/4234 ,  H01L29/66833 ,  H01L29/78648 ,  H01L29/792

Abstract: In sophisticated SOI transistor elements, the buried insulating layer may be specifically engineered so as to include non-standard dielectric materials. For instance, a charge-trapping material and/or a high-k dielectric material and/or a ferroelectric material may be incorporated into the buried insulating layer. In this manner, non-volatile storage transistor elements with superior performance may be obtained and/or efficiency of a back-bias mechanism may be improved.