公开(公告)号：US09082698B1

公开(公告)日：2015-07-14

申请号：US14201122

申请日：2014-03-07

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Manoj Joshi ,  Johannes Marinus van Meer ,  Manfred Eller

IPC: H01L21/425 ,  H01L21/265 ,  H01L29/66 ,  H01L29/06

CPC classification number: H01L29/66795 ,  H01L21/26506 ,  H01L29/1083 ,  H01L29/7851

Abstract: One illustrative method disclosed includes, among other things, forming a fin in a substrate, forming a well implant region in at least the substrate, forming a punch-stop implant region in the fin, performing at least one neutral implantation process with at least one neutral implant material to form a neutral boron-diffusion-blocking implant region in the fin, wherein an upper surface of the neutral boron-diffusion-blocking implant region is positioned closer to an upper surface of the fin than either the punch-stop implant region or the well implant region and, after forming the well implant region, the punch-stop implant region and the neutral boron-diffusion-blocking implant region, forming a gate structure above the fin.

Abstract translation: 所公开的一种示例性方法包括在衬底中形成翅片，在至少衬底中形成井注入区域，在翅片中形成冲压停止注入区域，至少执行至少一个中性注入工艺 中性植入材料以在翅片中形成中性硼扩散阻挡植入区域，其中中性硼扩散阻挡注入区域的上表面被定位成更接近翅片的上表面，比穿孔止动植入区域 或井注入区域，并且在形成阱注入区域之后，形成穿孔停止注入区域和中性硼扩散阻挡注入区域，在鳍片上方形成栅极结构。