公开(公告)号：US09263585B2

公开(公告)日：2016-02-16

申请号：US13663854

申请日：2012-10-30

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Daniel T. Pham ,  Robert J. Miller ,  Kungsuk Maitra

IPC: H01L21/336 ,  H01L29/78 ,  H01L29/66 ,  H01L21/265

CPC classification number: H01L29/7851 ,  H01L21/26506 ,  H01L29/66795 ,  H01L29/7842

Abstract: Disclosed herein are various methods of forming stressed channel regions on 3D semiconductor devices, such as, for example, FinFET semiconductor devices, through use of epitaxially formed materials. In one example, the method includes forming a plurality of spaced-apart trenches in a semiconducting substrate, wherein the trenches define at least a portion of a fin for the device, and performing an epitaxial deposition process to form an epitaxially formed stress-inducing material in the trenches.

Abstract translation: 本文公开了通过使用外延形成的材料在3D半导体器件（例如FinFET半导体器件）上形成应力沟道区的各种方法。 在一个示例中，该方法包括在半导体衬底中形成多个间隔开的沟槽，其中沟槽限定器件的鳍片的至少一部分，以及执行外延沉积工艺以形成外延形成的应力诱导材料 在壕沟里

公开(公告)号：US20140120677A1

公开(公告)日：2014-05-01

申请号：US13663854

申请日：2012-10-30

Applicant: GLOBALFOUNDRIES INC.

Inventor： Daniel T. Pham ,  Robert J. Miller ,  Kungsuk Maitra

IPC: H01L21/265 ,  H01L21/336

CPC classification number: H01L29/7851 ,  H01L21/26506 ,  H01L29/66795 ,  H01L29/7842

Abstract: Disclosed herein are various methods of forming stressed channel regions on 3D semiconductor devices, such as, for example, FinFET semiconductor devices, through use of epitaxially formed materials. In one example, the method includes forming a plurality of spaced-apart trenches in a semiconducting substrate, wherein the trenches define at least a portion of a fin for the device, and performing an epitaxial deposition process to form an epitaxially formed stress-inducing material in the trenches.

Abstract translation: 本文公开了通过使用外延形成的材料在3D半导体器件（例如FinFET半导体器件）上形成应力沟道区的各种方法。 在一个示例中，该方法包括在半导体衬底中形成多个间隔开的沟槽，其中沟槽限定器件的鳍片的至少一部分，以及执行外延沉积工艺以形成外延形成的应力诱导材料 在壕沟里