公开(公告)号：US20200176589A1

公开(公告)日：2020-06-04

申请号：US16207915

申请日：2018-12-03

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Siva P. Adusumilli ,  John J. Ellis-Monaghan ,  Anthony K. Stamper ,  Ian McCallum-Cook ,  Mark Goldstein

IPC: H01L29/66 ,  H01L29/786 ,  H01L21/265 ,  H01L21/762 ,  C23C16/40 ,  C23C16/48

Abstract: Structures with altered crystallinity beneath semiconductor devices and methods associated with forming such structures. A semiconductor layer is implanted over a first depth range of an inert gas species to modify the crystal structure of a semiconductor material of the semiconductor layer and form a first modified region. The semiconductor layer is annealed with a first annealing process to convert the semiconductor material within the first modified region to a non-single-crystal layer. The semiconductor layer is also implanted with ions of an element over a second depth range to modify the crystal structure of the semiconductor material of the semiconductor layer and form a second modified region containing a concentration of the element. The semiconductor layer is annealed with a second annealing process to convert the semiconductor material within the second modified region to an insulator layer containing the element.

公开(公告)号：US10651281B1

公开(公告)日：2020-05-12

申请号：US16207915

申请日：2018-12-03

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Siva P. Adusumilli ,  John J. Ellis-Monaghan ,  Anthony K. Stamper ,  Ian McCallum-Cook ,  Mark Goldstein

IPC: H01L29/32 ,  H01L29/66 ,  H01L29/786 ,  H01L21/265 ,  C23C16/48 ,  H01L21/762 ,  C23C16/40 ,  H01L29/04 ,  H01L21/266

Abstract: Structures with altered crystallinity beneath semiconductor devices and methods associated with forming such structures. A semiconductor layer is implanted over a first depth range of an inert gas species to modify the crystal structure of a semiconductor material of the semiconductor layer and form a first modified region. The semiconductor layer is annealed with a first annealing process to convert the semiconductor material within the first modified region to a non-single-crystal layer. The semiconductor layer is also implanted with ions of an element over a second depth range to modify the crystal structure of the semiconductor material of the semiconductor layer and form a second modified region containing a concentration of the element. The semiconductor layer is annealed with a second annealing process to convert the semiconductor material within the second modified region to an insulator layer containing the element.