CRITICAL DIMENSION AND PATTERN RECOGNITION STRUCTURES FOR DEVICES MANUFACTURED USING DOUBLE PATTERNING TECHNIQUES
    1.
    发明申请
    CRITICAL DIMENSION AND PATTERN RECOGNITION STRUCTURES FOR DEVICES MANUFACTURED USING DOUBLE PATTERNING TECHNIQUES 审中-公开
    使用双重绘图技术制造的设备的关键尺寸和图案识别结构

    公开(公告)号:US20150050811A1

    公开(公告)日:2015-02-19

    申请号:US14527129

    申请日:2014-10-29

    Abstract: An illustrative test structure is disclosed herein that includes a plurality of first line features and a plurality of second line features. In this embodiment, each of the second line features have first and second opposing ends and the first and second line features are arranged in a grating pattern such that the first ends of the first line features are aligned to define a first side of the grating structure and the second ends of the first features are aligned to define a second side of the grating structure that is opposite the first side of the grating structure. The first end of the second line features has a first end that extends beyond the first side of the grating structure while the second end of the second line features has a first end that extends beyond the second side of the grating structure.

    Abstract translation: 本文公开了包括多个第一线特征和多个第二线特征的说明性测试结构。 在该实施例中,每个第二线特征具有第一和第二相对端,并且第一和第二线特征被布置成光栅图案,使得第一线特征的第一端对准以限定光栅结构的第一侧 并且第一特征的第二端对齐以限定与光栅结构的第一侧相对的光栅结构的第二侧。 第二线特征的第一端具有延伸超过光栅结构的第一侧的第一端,而第二线特征的第二端具有延伸超过光栅结构的第二侧的第一端。

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