公开(公告)号：US20180158723A1

公开(公告)日：2018-06-07

申请号：US15370585

申请日：2016-12-06

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Ravi Srivastava ,  Sunil K. Singh

IPC: H01L21/768 ,  H01L21/027 ,  H01L21/033 ,  H01L21/311 ,  G03F7/09 ,  G03F7/039 ,  G03F7/038 ,  G03F7/20 ,  G03F7/26 ,  G03F7/16

CPC classification number: H01L21/76816 ,  G03F7/0043 ,  G03F7/094 ,  G03F7/095 ,  G03F7/40 ,  H01L21/0274 ,  H01L21/0337

Abstract: Methods of lithographic patterning a dielectric layer. A first resist layer is formed on a hardmask layer, and a second resist layer is formed on the first resist layer. The second resist layer is patterned to form a first opening, which is transferred from the second resist layer to the first resist layer. The second resist layer is removed from the first resist layer after the first opening is transferred from the second resist layer to the first resist layer. The first resist layer is patterned to form a second opening laterally displaced in the first resist layer from the first opening. The first resist layer is comprised of a metal oxide photoresist that is removable selective to the hardmask layer. The hardmask layer and the dielectric layer may be subsequently patterned using first resist layer.

公开(公告)号：US20150050811A1

公开(公告)日：2015-02-19

申请号：US14527129

申请日：2014-10-29

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Sohan Mehta ,  Tong Qing Chen ,  Vikrant Chauhan ,  Ravi Srivastava ,  Catherine Labelle ,  Mark Kelling

IPC: H01L21/311

CPC classification number: H01L21/311 ,  H01L21/31144 ,  H01L23/544 ,  H01L2223/5442 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An illustrative test structure is disclosed herein that includes a plurality of first line features and a plurality of second line features. In this embodiment, each of the second line features have first and second opposing ends and the first and second line features are arranged in a grating pattern such that the first ends of the first line features are aligned to define a first side of the grating structure and the second ends of the first features are aligned to define a second side of the grating structure that is opposite the first side of the grating structure. The first end of the second line features has a first end that extends beyond the first side of the grating structure while the second end of the second line features has a first end that extends beyond the second side of the grating structure.

Abstract translation: 本文公开了包括多个第一线特征和多个第二线特征的说明性测试结构。 在该实施例中，每个第二线特征具有第一和第二相对端，并且第一和第二线特征被布置成光栅图案，使得第一线特征的第一端对准以限定光栅结构的第一侧 并且第一特征的第二端对齐以限定与光栅结构的第一侧相对的光栅结构的第二侧。 第二线特征的第一端具有延伸超过光栅结构的第一侧的第一端，而第二线特征的第二端具有延伸超过光栅结构的第二侧的第一端。