公开(公告)号：US20170192050A1

公开(公告)日：2017-07-06

申请号：US14989109

申请日：2016-01-06

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Ming LEI

IPC: G01R31/28 ,  G01R31/307 ,  G01R31/27 ,  H01L27/11 ,  H01L21/66

CPC classification number: G01R31/2812 ,  G01R31/275 ,  G01R31/307 ,  H01L22/12 ,  H01L22/14 ,  H01L22/20 ,  H01L27/1104

Abstract: Methods for enabling in-line detection of TS-PC short defects at the TS-CMP processing stage are provided. Embodiments include providing a semiconductor substrate, the substrate having a plurality of partially formed MOSFET devices; performing a first defect inspection on the substrate, the first inspection including ACC; identifying one or more BVC candidates on the substrate based on the first inspection; performing a second defect inspection on the one or more BVC candidates, the second inspection performed without ACC; and detecting one or more BVC defects on the substrate based on the one or more BVC candidates appearing during both the first and second inspections.

公开(公告)号：US20170032929A1

公开(公告)日：2017-02-02

申请号：US14812317

申请日：2015-07-29

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Ming LEI ,  Byoung-Gi MIN

IPC: H01J37/22 ,  H01J37/26

CPC classification number: H01L22/00 ,  H01J2237/24564 ,  H01J2237/24592 ,  H01J2237/2817 ,  H01L22/12 ,  H01L22/20

Abstract: A method and apparatus for detecting VC defects and determining the exact shorting locations based on charging dynamics induced by scan direction variation are provided. Embodiments include providing a substrate having at least a partially formed device thereon, the partially formed device having at least a word-line, a share contact, and a bit-line; performing a first EBI on the at least partially formed device in a single direction; classifying defects by ADC based on the first EBI inspection; selecting DOI among the classified defects for further review; performing a second EBI on the DOI in a first, second, third, and fourth direction; comparing a result of the first direction against a result of the second direction and/or a result of the third direction against a result of the fourth direction; and determining a shorting location for each DOI based on the one or more comparisons.

Abstract translation: 提供了一种用于检测VC缺陷并基于由扫描方向变化引起的充电动态确定精确的短路位置的方法和装置。 实施例包括提供其上至少具有部分形成的器件的衬底，部分形成的器件至少具有字线，共用触点和位线; 在单个方向上在所述至少部分形成的装置上执行第一EBI; 根据第一次EBI检查对ADC进行分类缺陷; 在分类缺陷中选择DOI进行进一步审查; 在第一，第二，第三和第四方向上对DOI执行第二EBI; 将第一方向的结果与第二方向的结果和/或第三方向的结果相对于第四方向的结果进行比较; 以及基于所述一个或多个比较确定每个DOI的短路位置。