公开(公告)号：US09252245B1

公开(公告)日：2016-02-02

申请号：US14478494

申请日：2014-09-05

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Murat Akarvardar ,  Rama Kambhampati

IPC: H01L29/66 ,  H01L27/088 ,  H01L21/3065 ,  H01L21/306 ,  H01L29/45 ,  H01L21/3105 ,  H01L21/283

CPC classification number: H01L29/6681 ,  H01L21/283 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/31053 ,  H01L29/45 ,  H01L29/66545 ,  H01L29/66795

Abstract: A methodology for spacer-last replacement metal gate (RMG) flow that exhibits reduced variability, and the resulting device are disclosed. Embodiments may include forming a dummy gate stack comprising a dummy nitride portion on a dummy oxide portion on a substrate, forming source/drain regions in the substrate at opposite sides of the dummy gate stack, depositing an insulating material over the source/drain regions, coplanar with the dummy gate stack, and replacing the dummy gate stack with a metal gate stack and spacers.

Abstract translation: 公开了一种表现出减小的可变性的间隔最后置换金属栅（RMG）流的方法，并且所得到的装置被公开。 实施例可以包括在衬底上的虚拟氧化物部分上形成包括虚拟氮化物部分的虚拟栅极堆叠，在虚设栅极叠层的相对侧的基板中形成源极/漏极区域，在源极/漏极区域上沉积绝缘材料， 与虚拟栅极堆叠共面，并用金属栅极堆叠和间隔物替代伪栅极堆叠。