公开(公告)号：US20180096839A1

公开(公告)日：2018-04-05

申请号：US15284773

申请日：2016-10-04

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Ryan Ryoung-Han KIM ,  Wenhui WANG ,  Azat LATYPOV ,  Tamer COSKUN ,  Lei SUN

IPC: H01L21/027 ,  H01L21/66 ,  H01L21/8234 ,  H01L21/306

CPC classification number: H01L21/0276 ,  H01L21/0337 ,  H01L21/30604 ,  H01L21/3086 ,  H01L21/31144 ,  H01L21/32139 ,  H01L21/823431 ,  H01L21/823481 ,  H01L22/12 ,  H01L22/30

Abstract: Methods for fabricating integrated circuits are provided. In one example, a method includes providing a circuit structure layer over a substrate and at least one etch layer over the circuit structure layer, in the at least one etch layer patterning at least one primary pattern feature having at least one primary pattern feature dimension and at least one assist pattern feature having at least one assist pattern feature dimension, where the primary pattern feature dimension is greater than the assist pattern feature dimension, reducing the at least one primary pattern feature dimension and closing the assist pattern feature to form an etch pattern, and etching a circuit structure feature using the etch pattern.

公开(公告)号：US20160141291A1

公开(公告)日：2016-05-19

申请号：US14540724

申请日：2014-11-13

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Youngtag WOO ,  Myungjun LEE ,  Ryan Ryoung-Han KIM ,  Jongwook KYE

IPC: H01L27/11 ,  H01L23/522 ,  H01L23/528 ,  H01L27/02

CPC classification number: H01L27/1104 ,  H01L21/76895 ,  H01L23/485 ,  H01L23/5226 ,  H01L23/5286 ,  H01L27/0207 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Methods for utilizing metal segments of an additional metal layer as landing pads for vias and also as local interconnects between contacts in an IC device and resulting devices are disclosed. Embodiments include forming source/drain and gate contacts connected to transistors on a substrate in an integrated circuit device, each contact having an upper surface with a first area; forming metal segments in a plane at the upper surface of the contacts, each metal segment being in contact with one or more of the contacts and having a second area greater than the first area; and forming one or more vias between one or more of the metal segments and one or more first segments of a first metal layer.

Abstract translation: 公开了用于利用附加金属层的金属段作为通孔的着陆焊盘以及IC器件中的触点之间的局部互连以及所产生的器件的方法。 实施例包括在集成电路器件中形成连接到衬底上的晶体管的源极/漏极和栅极触点，每个触点具有带有第一区域的上表面; 在触头的上表面处的平面中形成金属段，每个金属段与一个或多个触点接触并具有大于第一区的第二区; 以及在一个或多个金属段和第一金属层的一个或多个第一段之间形成一个或多个通孔。