公开(公告)号：US09589850B1

公开(公告)日：2017-03-07

申请号：US14964746

申请日：2015-12-10

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Chanro Park ,  Kisup Chung ,  Sivananda Kanakasabapathy

IPC: H01L21/8238 ,  H01L29/49

CPC classification number: H01L21/823842 ,  H01L21/823456 ,  H01L21/82385 ,  H01L21/823857 ,  H01L21/823864 ,  H01L29/4966

Abstract: Controlled recessing of materials in cavities and resulting devices are disclosed. Embodiments include providing a dielectric layer over first-type and second-type transistor regions, and long and short channel-cavities in the dielectric in each transistor region; conformally forming a gate dielectric layer in the long and short channel-cavities, and on an upper surface of the dielectric; conformally forming a first-type work-function metal layer on the gate dielectric; forming a block-mask over the first-type transistor region; removing the first-type work-function metal from the second-type transistor region; removing the block-mask; conformally forming a second-type work-function metal on all exposed surfaces; forming a metal barrier layer on exposed surfaces and filling the short channel-cavities; filling the long channel-cavities with a conductive material; planarizing all layers down to the upper surface of the dielectric; and applying a tilted ion beam to recess the gate dielectric, first and second type work-function metal, and metal barrier layers.

Abstract translation: 公开了空腔和结果装置中材料的受控凹陷。 实施例包括在第一类型和第二类型晶体管区域上提供介电层，以及在每个晶体管区域中的电介质中的长和短沟道腔; 在长和短通道腔中保形地形成栅极电介质层，并在电介质的上表面上形成栅介电层; 在栅极电介质上保形地形成第一型功函数金属层; 在所述第一型晶体管区域上形成块掩模; 从第二类型晶体管区域去除第一类型功函数金属; 去除阻挡掩模; 在所有暴露的表面上保形地形成第二种功能金属; 在暴露的表面上形成金属阻挡层并填充短沟槽; 用导电材料填充长通道腔; 将所有层平坦化到电介质的上表面; 并且施加倾斜的离子束以使所述栅极电介质，第一和第二类型功函数金属以及金属阻挡层凹陷。