公开(公告)号：US20130273729A1

公开(公告)日：2013-10-17

申请号：US13888753

申请日：2013-05-07

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Klaus Hempel ,  Sven Beyer ,  Markus Lenski ,  Stephan Kruegel

IPC: H01L21/28

CPC classification number: H01L21/28088 ,  H01L21/28026 ,  H01L21/823807 ,  H01L21/823842 ,  H01L21/82385 ,  H01L29/66545 ,  H01L29/66583 ,  H01L29/7833 ,  H01L29/7843

Abstract: In a replacement gate approach, a superior cross-sectional shape of the gate opening may be achieved by performing a material erosion process in an intermediate state of removing the placeholder material. Consequently, the remaining portion of the placeholder material may efficiently protect the underlying sensitive materials, such as a high-k dielectric material, when performing the corner rounding process sequence.

Abstract translation: 在替代浇口方法中，可以通过在去除占位材料的中间状态下进行材料侵蚀过程来实现闸门开口的优越的横截面形状。 因此，当执行拐角舍入处理顺序时，占位符材料的剩余部分可以有效地保护诸如高k电介质材料的底层敏感材料。

公开(公告)号：US08735270B2

公开(公告)日：2014-05-27

申请号：US13888753

申请日：2013-05-07

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Klaus Hempel ,  Sven Beyer ,  Markus Lenski ,  Stephan Kruegel

IPC: H01L21/3205 ,  H01L21/4763 ,  H01L21/336 ,  H01L21/8238 ,  H01L21/28

CPC classification number: H01L21/28088 ,  H01L21/28026 ,  H01L21/823807 ,  H01L21/823842 ,  H01L21/82385 ,  H01L29/66545 ,  H01L29/66583 ,  H01L29/7833 ,  H01L29/7843

Abstract: In a replacement gate approach, a superior cross-sectional shape of the gate opening may be achieved by performing a material erosion process in an intermediate state of removing the placeholder material. Consequently, the remaining portion of the placeholder material may efficiently protect the underlying sensitive materials, such as a high-k dielectric material, when performing the corner rounding process sequence.

Abstract translation: 在替代浇口方法中，可以通过在去除占位材料的中间状态下进行材料侵蚀过程来实现闸门开口的优越的横截面形状。 因此，当执行拐角舍入处理顺序时，占位符材料的剩余部分可以有效地保护诸如高k电介质材料的底层敏感材料。