公开(公告)号：US09425052B2

公开(公告)日：2016-08-23

申请号：US14698103

申请日：2015-04-28

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Thilo Scheiper ,  Jan Hoentschel ,  Steven Langdon

IPC: H01L21/8238 ,  H01L21/265 ,  H01L21/28 ,  H01L29/10 ,  H01L21/266 ,  H01L21/8234 ,  H01L21/84 ,  H01L27/12 ,  H01L29/51

CPC classification number: H01L21/26506 ,  H01L21/266 ,  H01L21/2822 ,  H01L21/823412 ,  H01L21/823418 ,  H01L21/823437 ,  H01L21/823807 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/1054 ,  H01L29/517

Abstract: Performance and/or uniformity of sophisticated transistors may be enhanced by incorporating a carbon species in the active regions of the transistors prior to forming complex high-k metal gate electrode structures. For example, a carbon species may be incorporated by ion implantation into the active region of a P-channel transistor and an N-channel transistor after selectively forming a threshold adjusted semiconductor material for the P-channel transistor, while the active region of the N-channel transistor is still masked.

Abstract translation: 复杂晶体管的性能和/或均匀性可以通过在形成复杂的高k金属栅电极结构之前在晶体管的有源区中引入碳物种来增强。 例如，在选择性地形成用于P沟道晶体管的阈值调节半导体材料之后，可以通过离子注入将碳物质并入P沟道晶体管和N沟道晶体管的有源区，而N的有源区 通道晶体管仍然被掩蔽。

公开(公告)号：US20150228490A1

公开(公告)日：2015-08-13

申请号：US14698103

申请日：2015-04-28

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Thilo Scheiper ,  Jan Hoentschel ,  Steven Langdon

IPC: H01L21/265 ,  H01L21/8234 ,  H01L21/266

CPC classification number: H01L21/26506 ,  H01L21/266 ,  H01L21/2822 ,  H01L21/823412 ,  H01L21/823418 ,  H01L21/823437 ,  H01L21/823807 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/1054 ,  H01L29/517

Abstract: Performance and/or uniformity of sophisticated transistors may be enhanced by incorporating a carbon species in the active regions of the transistors prior to forming complex high-k metal gate electrode structures. For example, a carbon species may be incorporated by ion implantation into the active region of a P-channel transistor and an N-channel transistor after selectively forming a threshold adjusted semiconductor material for the P-channel transistor, while the active region of the N-channel transistor is still masked.

Abstract translation: 复杂晶体管的性能和/或均匀性可以通过在形成复杂的高k金属栅电极结构之前在晶体管的有源区中引入碳物种来增强。 例如，在选择性地形成用于P沟道晶体管的阈值调节半导体材料之后，可以通过离子注入将碳物质并入P沟道晶体管和N沟道晶体管的有源区，而N的有源区 通道晶体管仍然被掩蔽。