公开(公告)号：US20160329278A1

公开(公告)日：2016-11-10

申请号：US15134435

申请日：2016-04-21

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Guillaume BOUCHE ,  Andy WEI ,  Sudharshanan RAGHUNATHAN

IPC: H01L23/522 ,  H01L23/528 ,  H01L23/532

CPC classification number: H01L23/5226 ,  H01L21/76816 ,  H01L21/76897 ,  H01L23/528 ,  H01L23/53228 ,  H01L23/53238 ,  H01L23/53257 ,  H01L23/53266 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of forming 2D self-aligned vias before forming a subsequent metal layer and reducing capacitance of the resulting device and the resulting device are provided. Embodiments include forming dummy metal lines in a SiOC layer and extending in a first direction; replacing the dummy metal lines with metal lines, each metal line having a nitride cap; forming a softmask stack over the nitride cap and the SiOC layer; patterning a plurality of vias through the softmask stack down to the metal lines, the plurality of vias self-aligned along a second direction; removing the softmask stack; forming second dummy metal lines over the metal lines and extending in the second direction; forming a second SiOC layer between the dummy second metal lines on the SiOC layer; and replacing the dummy second metal lines with second metal lines, the second metal lines electrically connected to the metal lines through a via.

Abstract translation: 提供了在形成后续金属层之前形成2D自对准通孔并降低所得器件和所得器件的电容的方法。 实施例包括在SiOC层中形成虚拟金属线并沿第一方向延伸; 用金属线替代虚拟金属线，每条金属线都有氮化物盖; 在氮化物盖和SiOC层上形成软掩模堆叠; 通过所述软掩模堆叠将多个通孔图形化成金属线，所述多个通孔沿着第二方向自对准; 去除软掩码堆栈; 在金属线上形成第二虚拟金属线并在第二方向上延伸; 在SiOC层上的虚拟第二金属线之间形成第二SiOC层; 并且用第二金属线代替虚拟第二金属线，第二金属线通过通孔与金属线电连接。

公开(公告)号：US20160322298A1

公开(公告)日：2016-11-03

申请号：US15207652

申请日：2016-07-12

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Guillaume BOUCHE ,  Andy WEI ,  Sudharshanan RAGHUNATHAN

IPC: H01L23/528 ,  H01L21/3105 ,  H01L21/768 ,  H01L21/02 ,  H01L23/522 ,  H01L23/532

CPC classification number: H01L23/528 ,  H01L21/02118 ,  H01L21/0337 ,  H01L21/31051 ,  H01L21/32139 ,  H01L21/76802 ,  H01L21/76816 ,  H01L21/76897

Abstract: A method of lithographically cutting a Mx line before the Mx line is lithographically defined by patterning and the resulting 2DSAV device are provided. Embodiments include forming an a-Si dummy metal layer over a SiO2 layer; forming a first softmask stack over the a-Si dummy metal layer; patterning a plurality of vias through the first softmask stack down to the SiO2 layer; removing the first soft mask stack; forming first and second etch stop layers over the a-Si dummy metal layer, the first etch stop layer formed in the plurality of vias; forming a-Si mandrels on the second etch stop layer; forming oxide spacers on opposite sides of each a-Si mandrel; removing the a-Si mandrels; forming a-Si dummy metal lines in the a-Si dummy metal layer below the oxide spacers; and forming a SiOC layer between the a-Si dummy metal lines.

Abstract translation: 在Mx线之前光刻地切割Mx线的方法通过图案化光刻定义，并且提供所得到的2DSAV器件。 实施例包括在SiO 2层上形成a-Si虚拟金属层; 在所述a-Si虚拟金属层上形成第一软掩模堆叠; 将通过第一软掩模堆叠的多个通孔图形化成SiO 2层; 移除第一软掩模层; 在a-Si虚拟金属层上形成第一和第二蚀刻停止层，形成在多个通孔中的第一蚀刻停止层; 在第二蚀刻停止层上形成a-Si心轴; 在每个a-Si心轴的相对侧上形成氧化物间隔物; 去除a-Si心轴; 在氧化物间隔物下面的a-Si虚拟金属层中形成a-Si虚拟金属线; 并在a-Si虚拟金属线之间形成SiOC层。