Abstract:
Device structures that exhibit negative resistance characteristics and fabrication methods for such device structures. A signal is applied to a metal layer of a metal-insulator-semiconductor capacitor to cause a breakdown of an insulator layer of the metal-insulator-semiconductor capacitor at a location. The breakdown at the location of the insulator layer causes the metal-insulator-semiconductor capacitor to exhibit negative resistance. The metal layer may be comprised of a polycrystalline metal. A grain of the polycrystalline metal may penetrate through the insulator layer and into a portion of a substrate at the location of the breakdown.
Abstract:
An apparatus and method for facilitating Atomic Force Microscopy, SEM Nano-Probing, Scanning Probe Microscopy, and Collimated Ion Milling, through the implementation of a removable, magnetized fixture for fixing the position of a sample requiring surface treatment, the fixture attachable to a holder requiring surface treatment, the holder being mountable in various instruments, the fixture being transportable in a container having a magnetized surface plate or disc for magnetic attachment of said fixture, with the container having a valve to permit alternative evacuation and backfill with an inert gas to protect the sample surface.