公开(公告)号：US09275898B1

公开(公告)日：2016-03-01

申请号：US14637442

申请日：2015-03-04

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Jiehui Shu ,  Zhiguo Sun ,  Yang Bum Lee ,  Huang Liu

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/532

CPC classification number: H01L23/53228 ,  C23C16/04 ,  C23C16/16 ,  C23C16/45523 ,  H01L21/28562 ,  H01L21/76826 ,  H01L21/76849 ,  H01L21/76862 ,  H01L21/76883 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Methods of forming a Co cap on a Cu interconnect in or through an ULK ILD with improved selectivity while protecting an ULK ILD surface are provided. Embodiments include providing a Cu filled via in an ULK ILD; depositing a Co precursor and H2 over the Cu-filled via and the ULK ILD, the Co precursor and H2 forming a Co cap over the Cu-filled via; depositing an UV cured methyl over the Co cap and the ULK ILD; performing an NH3 plasma treatment after depositing the UV cured methyl; and repeating the steps of depositing a Co precursor through performing an NH3 plasma treatment to remove impurities from the Co cap.

Abstract translation: 提供了在保护ULK ILD表面的情况下，通过ULK ILD或通过ULK ILD在Cu互连上形成Co帽的方法，其具有改进的选择性。 实施例包括在ULK ILD中提供Cu填充的通孔; 在Cu填充的通孔和ULK ILD上沉积Co前体和H 2，Co前体和H 2在Cu填充的通孔上形成Co盖; 在Co盖和ULK ILD上沉积UV固化的甲基; 沉积UV固化甲基后进行NH3等离子体处理; 并且重复以下步骤：通过进行NH 3等离子体处理来沉积Co前体以从Co盖去除杂质。