公开(公告)号：US20200335552A1

公开(公告)日：2020-10-22

申请号：US16387614

申请日：2019-04-18

Applicant: GLOBALFOUNDRIES Singapore Pte. Ltd.

Inventor： Wei CHANG ,  Eng Huat TOH ,  Shyue Seng TAN ,  Ruchil Kumar JAIN

IPC: H01L27/24 ,  H01L29/66

Abstract: According to various non-limiting embodiments a memory device may include a silicon-on-insulator layer having a conductivity of a first polarity, a first raised structure over the silicon-on-insulator layer, the second raised structure over the silicon-on-insulator layer, an dummy gate arranged between the first raised structure and the second raised structure, and a memory connected to the second raised structure. The first raised structure may have a conductivity of the first polarity, and the second raised structure may include a first diode layer having a conductivity of a second polarity opposite to the first polarity.

公开(公告)号：US20190259875A1

公开(公告)日：2019-08-22

申请号：US15898669

申请日：2018-02-19

Applicant: GLOBALFOUNDRIES Singapore Pte. Ltd.

Inventor： Liming LI ,  Shaoqiang ZHANG ,  Ruchil Kumar JAIN ,  Raj Verma PURAKH

IPC: H01L29/78 ,  H01L21/761 ,  H01L21/8238 ,  H01L27/06 ,  H01L29/10 ,  H01L29/66 ,  H01L29/08 ,  H01L29/49

Abstract: A transistor, such as laterally diffused (LD) transistor, having a band region below a drift well is disclosed. The band region and drift well are oppositely doped. The band region is self-aligned to the drift well. The band region reduces the depth of the drift well. A shallower drift well reduces risk of punch-through, improving reliability. In addition, the shallower drift well reduces the drain to body parasitic capacitance which improves performance.

公开(公告)号：US20190036011A1

公开(公告)日：2019-01-31

申请号：US15661826

申请日：2017-07-27

Applicant: GLOBALFOUNDRIES Singapore Pte. Ltd.

Inventor： Bin LIU ,  Eng Huat TOH ,  Ruchil Kumar JAIN

IPC: H01L43/04 ,  H01L43/06 ,  H01L43/14 ,  G01R33/07 ,  G01R33/02 ,  G01R33/00

CPC classification number: H01L43/04 ,  G01R33/0052 ,  G01R33/0206 ,  G01R33/077 ,  H01L27/22 ,  H01L43/065 ,  H01L43/14

Abstract: A method of forming a 3D Hall effect sensor and the resulting device are provided. Embodiments include forming a p-type well in a substrate; forming a first n-type well in a first region surrounded by the p-type well in top view; forming a second n-type well in a second region surrounding the p-type well; providing n-type dopant in the first and second n-type wells; and providing p-type dopant in the p-type well and the first n-type well.

公开(公告)号：US20190259936A1

公开(公告)日：2019-08-22

申请号：US16399393

申请日：2019-04-30

Applicant: GLOBALFOUNDRIES Singapore Pte. Ltd.

Inventor： Bin LIU ,  Eng Huat TOH ,  Ruchil Kumar JAIN

IPC: H01L43/04 ,  G01R33/00 ,  G01R33/02 ,  G01R33/07 ,  H01L43/14 ,  H01L43/06

Abstract: A method of forming a 3D Hall effect sensor and the resulting device are provided. Embodiments include forming a p-type well in a substrate; forming a first n-type well in a first region surrounded by the p-type well in top view; forming a second n-type well in a second region surrounding the p-type well; providing n-type dopant in the first and second n-type wells; and providing p-type dopant in the p-type well and the first n-type well.

公开(公告)号：US20180198061A1

公开(公告)日：2018-07-12

申请号：US15402799

申请日：2017-01-10

Applicant: GLOBALFOUNDRIES Singapore Pte. Ltd.

Inventor： Eng Huat TOH ,  Ruchil Kumar JAIN ,  Yongshun SUN ,  Shyue Seng TAN

IPC: H01L43/06 ,  H01L43/04 ,  H01L43/14 ,  G01R33/07

CPC classification number: H01L43/065 ,  G01R33/07 ,  H01L43/04 ,  H01L43/14

Abstract: A method of forming a 3D Hall effect sensor and the resulting device are provided. Embodiments include forming a p-type well in a substrate; forming a first n-type well in a first region surrounded by the p-type well in top view; forming a second n-type well in a second region surrounding the p-type well; implanting n-type dopant in the first and second n-type wells; and implanting p-type dopant in the p-type well and the first n-type well.

公开(公告)号：US20190148624A1

公开(公告)日：2019-05-16

申请号：US16243801

申请日：2019-01-09

Applicant: GLOBALFOUNDRIES Singapore Pte. Ltd.

Inventor： Eng Huat TOH ,  Ruchil Kumar JAIN ,  Yongshun SUN ,  Shyue Seng TAN

IPC: H01L43/06 ,  H01L43/14 ,  G01R33/07 ,  H01L43/04

CPC classification number: H01L43/065 ,  G01R33/07 ,  H01L43/04 ,  H01L43/14

Abstract: A method of forming a 3D Hall effect sensor and the resulting device are provided. Embodiments include forming a p-type well in a substrate; forming a first n-type well in a first region surrounded by the p-type well in top view; forming a second n-type well in a second region surrounding the p-type well; implanting n-type dopant in the first and second n-type wells; and implanting p-type dopant in the p-type well and the first n-type well.