公开(公告)号：US08664708B2

公开(公告)日：2014-03-04

申请号：US13775259

申请日：2013-02-25

申请人： GLOBALFOUNDRIES Singapore Pte. Ltd.

发明人： Sung Mun Jung ,  Kian Hong Lim ,  Jianbo Yang ,  Swee Tuck Woo ,  Sanford Chu

IPC分类号： H01L29/76

CPC分类号： H01L29/7881 ,  G11C16/0433 ,  H01L21/28273 ,  H01L27/11521 ,  H01L27/11524 ,  H01L29/66825

摘要： A method of forming a device is disclosed. The method includes providing a substrate prepared with a cell area and forming first and second gates of first and second transistors in the cell area. The first gate includes a second sub-gate surrounding a first sub-gate. The first and second sub-gates of the first gate are separated by a first intergate dielectric layer. The second gate includes a second sub-gate surrounding a first sub-gate. The first and second sub-gates of the second gate are separated by a second intergate dielectric layer. The method also includes forming first and second junctions of the first and second transistors. A first gate terminal is formed and coupled to the second sub-gate of the first transistor. A second gate terminal is formed and coupled to at least the first sub-gate of the second transistor.

摘要翻译： 公开了一种形成装置的方法。 该方法包括提供准备有单元区域的基板，并在单元区域中形成第一和第二晶体管的第一和第二栅极。 第一栅极包括围绕第一子栅极的第二子栅极。 第一栅极的第一和第二子栅极由第一栅极介电层分开。 第二栅极包括围绕第一子栅极的第二子栅极。 第二栅极的第一和第二子栅极由第二栅极间介电层分开。 该方法还包括形成第一和第二晶体管的第一和第二结。 第一栅极端子形成并耦合到第一晶体管的第二子栅极。 第二栅极端子形成并耦合到至少第二晶体管的第一子栅极。

公开(公告)号：US08664711B2

公开(公告)日：2014-03-04

申请号：US14019508

申请日：2013-09-05

申请人： GLOBALFOUNDRIES Singapore Pte. Ltd.

发明人： Sung Mun Jung ,  Swee Tuck Woo ,  Sanford Chu ,  Liang Choo Hsia

IPC分类号： H01L29/788

CPC分类号： H01L29/511 ,  H01L21/02326 ,  H01L21/28282 ,  H01L22/12 ,  H01L22/20 ,  H01L29/792

摘要： A method of forming a device is disclosed. The method includes providing a substrate and forming a device layer on the substrate having a formed thickness TFD. A capping layer is formed on the substrate having a formed thickness TFC. Forming the capping layer consumes a desired amount of the device layer to cause the thickness of the device layer to be about the target thickness TTD. The thickness of the capping layer is adjusted from TFC to about a target thickness TTC.

摘要翻译： 公开了一种形成装置的方法。 该方法包括提供衬底并在具有成形厚度TFD的衬底上形成器件层。 在具有成形厚度TFC的基板上形成覆盖层。 形成覆盖层消耗所需量的器件层，以使器件层的厚度达到目标厚度TTD。 将覆盖层的厚度从TFC调整到大约目标厚度TTC。

公开(公告)号：US08659067B2

公开(公告)日：2014-02-25

申请号：US13775261

申请日：2013-02-25

申请人： GLOBALFOUNDRIES Singapore Pte. Ltd.

发明人： Sung Mun Jung ,  Kian Hong Lim ,  Jianbo Yang ,  Swee Tuck Woo ,  Sanford Chu

IPC分类号： H01L29/76

CPC分类号： H01L21/28273 ,  H01L27/11521 ,  H01L27/11524 ,  H01L29/66825 ,  H01L29/7881

摘要： A method of forming a device is disclosed. The method includes providing a substrate prepared with a cell area separated by other active areas by isolation regions. First and second gates of first and second transistors in the cell area are formed. The first gate includes first and second sub-gates separated by a first intergate dielectric layer. The second gate includes a second sub-gate surrounding a first sub-gate. The first and second sub-gates of the second gate are separated by a second intergate dielectric layer. First and second junctions of the first and second transistors are formed. The method also includes forming a first gate terminal coupled to the second sub-gate of the first transistor and a second gate terminal coupled to at least the first sub-gate of the second transistor.

摘要翻译： 公开了一种形成装置的方法。 该方法包括提供制备有由其它活性区域隔离的细胞区域的基底。 在单元区域中形成第一和第二晶体管的第一和第二栅极。 第一栅极包括由第一隔间栅极介电层隔开的第一和第二子栅极。 第二栅极包括围绕第一子栅极的第二子栅极。 第二栅极的第一和第二子栅极由第二栅极间介电层分开。 形成第一和第二晶体管的第一和第二结。 该方法还包括形成耦合到第一晶体管的第二子栅极的第一栅极端子和耦合到第二晶体管的至少第一子栅极的第二栅极端子。