公开(公告)号：US11257718B2

公开(公告)日：2022-02-22

申请号：US16780046

申请日：2020-02-03

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Chanro Park ,  Stan Tsai

IPC: H01L21/8234 ,  H01L21/768 ,  H01L21/311 ,  H01L21/321 ,  H01L27/088 ,  H01L29/45 ,  H01L29/06 ,  H01L21/285 ,  H01L29/08 ,  H01L29/417 ,  H01L29/66

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to contact structures and methods of manufacture. The method includes: recessing an isolation region between adjacent gate structures and below metallization overburden of source/drain metallization; planarizing the metallization overburden to a level of the adjacent gate structures; and forming source/drain contacts to the source/drain metallization, on sides of and extending above the adjacent gate structures.