公开(公告)号：US20210173145A1

公开(公告)日：2021-06-10

申请号：US16703387

申请日：2019-12-04

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Benjamin V. Fasano ,  Jorge A. Lubguban ,  Sarah H. Knickerbocker ,  Tracy A. Tong

IPC: G02B6/122 ,  G02B6/12 ,  G02B6/38

Abstract: Photonic integrated circuit (PIC) packages include a PIC die. The PIC die includes a waveguide(s) positioned on the PIC die, and a groove(s) formed in a surface of the PIC die. The groove(s) corresponds to and is positioned directly adjacent the waveguide(s). The PIC package also includes an optical fiber(s) operatively coupled to the waveguide(s) of the PIC die. The optical fiber(s) are positioned in the groove(s) of the PIC die and include an end positioned adjacent the waveguide(s). Additionally, the PIC package includes a plate positioned over a section of the optical fiber(s), and the plate includes a first edge positioned adjacent the waveguide(s) of the PIC die, and a second edge positioned opposite the first edge. The PIC package also includes a first adhesive disposed along the second edge of the plate and a second adhesive disposed along the first edge of the plate.

公开(公告)号：US20240079360A1

公开(公告)日：2024-03-07

申请号：US17929790

申请日：2022-09-06

Applicant: GlobalFoundries U.S. Inc.

Inventor： Jorge A. Lubguban ,  Sarah H. Knickerbocker ,  Lloyd Burrell ,  John J. Garant ,  Matthew C. Gorfien

IPC: H01L23/00

CPC classification number: H01L24/08 ,  H01L24/05 ,  H01L24/80 ,  H01L2224/05647 ,  H01L2224/08145 ,  H01L2224/80379 ,  H01L2224/80895 ,  H01L2224/80896

Abstract: A bonding structure for a semiconductor substrate and related method are provided. The bonding structure includes a first oxide layer on the semiconductor substrate, and a second oxide layer on the first oxide layer, the second oxide layer for bonding to another structure. The second oxide layer has a higher stress level than the first oxide layer, and the second oxide layer is thinner than the first oxide layer. The second oxide layer may also have a higher density than the first oxide layer. The bonding structure can be used to bond chips to wafer or wafer to wafer and provides a greater bond strength than just a thick oxide layer.