公开(公告)号：US11069830B1

公开(公告)日：2021-07-20

申请号：US16819416

申请日：2020-03-16

Applicant: GLOBALFOUNDRIES U.S. Inc. ,  IMEC vzw

Inventor： Bartlomiej J. Pawlak ,  Clement J. E. Porret ,  Srinivasan Ashwyn Srinivasan

IPC: H01L31/028 ,  H01L31/105 ,  G02F1/225 ,  G02F1/015 ,  G02F1/025 ,  G02B6/13 ,  G02B6/42 ,  H01L33/06 ,  H01L33/26 ,  H01L33/14 ,  H01L33/00

Abstract: Disclosed is a quantum-confined Stark effect (QCSE) modulator. In the modulator, a first doped semiconductor region has a first type conductivity, is at the bottom of a trench in a dielectric layer and is immediately adjacent to a semiconductor layer. An MQW region is in the trench on the first doped semiconductor region and at least upper segments of sidewalls of the MQW region are angled away from adjacent sidewalls of the trench such that there are spaces between the MQW region and the dielectric layer. Dielectric spacers fill the spaces. A second doped semiconductor region has a second type conductivity, is on top of the MQW region and optionally extends laterally onto the tops of the dielectric spacers. The spacers prevent shorting of the doped semiconductor regions. Also disclosed are embodiments of a photonics structure including the modulator and of methods for forming the modulator and the photonics structure.