公开(公告)号：US20240421196A1

公开(公告)日：2024-12-19

申请号：US18209128

申请日：2023-06-13

Applicant: GaN Systems Inc.

Inventor： Abhinandan DIXIT ,  Jayasimha PRASAD ,  Thomas MACELWEE ,  Vineet UNNI

IPC: H01L29/40 ,  H01L23/31 ,  H01L29/20 ,  H01L29/66 ,  H01L29/778

Abstract: A GaN semiconductor power transistor structure with a slanted gate field plate, and a method of fabrication are disclosed. The gate field plate comprises a gate metal field plate and slanted gate field plate structure formed using contact metal and/or interconnect metal. The slanted structure of the gate field plate is defined by etching of a dielectric layer having a graded composition, to form a slanted opening that is filled with conductive metal. The dielectric thickness under the gate field plate and the slant angle are configured to shape appropriately the electric field in the region between the gate and drain.

公开(公告)号：US20240413234A1

公开(公告)日：2024-12-12

申请号：US18331071

申请日：2023-06-07

Applicant: GAN SYSTEMS INC.

Inventor： Marco A. ZUNIGA ,  Thomas William MACELWEE ,  Vineet UNNI ,  Claudio Andres CANIZARES

IPC: H01L29/778 ,  H01L29/20 ,  H01L29/417 ,  H03K17/687

Abstract: A transistor structure that includes multiple heterojunction layer sets, each generating a two-dimensional electron gas (2DEG), such that the transistor structure has a stack of 2DEGs that may be used to conduct between source and drain. A terminal is provided proximate an uppermost 2DEG to control whether the uppermost 2DEG is continuous between a source contact and a source plug. A source plug connects the uppermost 2DEG with the next 2DEG, and a drain plug also connects the uppermost 2DEG with the next 2DEG. Thus, the gate terminal may control the flow of current in sub-surface 2DEGs between the source and drain.