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公开(公告)号:US20230175441A1
公开(公告)日:2023-06-08
申请号:US17545321
申请日:2021-12-08
Applicant: General Electric Company
Inventor: David A. Langan , Richard Joseph Gawrelski , Emad A. Andarawis , Andrew W. Berner , Andrea Marie Schmitz , Richard St-Pierre
CPC classification number: F02C9/00 , B64D31/00 , G06F21/602 , H04L12/40032 , F05D2220/323 , F05D2270/00 , H04L2012/4028
Abstract: A control system for an engine includes a distributed control module configured to be associated with a sensor of the engine, a digital link, and a communication control. The distributed control module is connected to the communication control via the digital link. The communication control includes a bus communication engine configured to communicate with the engine control via a bus, and a memory. The memory includes a first buffer that is associated with the distributed control module and a second buffer that is associated with the bus communication engine.
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2.
公开(公告)号:US20240159145A1
公开(公告)日:2024-05-16
申请号:US17981945
申请日:2022-11-07
Applicant: General Electric Company
Inventor: Deepak Trivedi , Yew Teck Tan , Emad A. Andarawis
Abstract: A system for use in navigating and/or forming a tunnel includes a tunneling device including a body assembly and a fluid line coupled to the body assembly. The body assembly includes a first section and a second section that are configured to selectively adjust their size and move the body assembly through an underground location when a pressurized fluid is delivered to the body assembly through the fluid line. The system further includes at least one sensor coupled to the body assembly and/or the fluid line. The at least one sensor is configured to provide information related to an operating parameter of at least one of the first section of the body assembly or the second section of the body assembly. The system also includes a controller configured to determine an environmental characteristic of the tunnel based on the information provided by the at least one sensor.
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3.
公开(公告)号:US20240151864A1
公开(公告)日:2024-05-09
申请号:US17981981
申请日:2022-11-07
Applicant: General Electric Company
Inventor: Kirk D. Wallace , Emad A. Andarawis , Deepak Trivedi , Brian J. Scherer
CPC classification number: G01V1/162 , G01N29/0654 , G01V1/18 , G01V3/12
Abstract: A system includes a tunneling device including a body assembly configured to move through an interior cavity of a tunnel. The system also includes a distributed communication and sensing system and a controller. The distributed communication and sensing system includes a first beacon coupled to the body assembly, and a second beacon positioned outside of the tunnel. The second beacon is communicatively coupled to the first beacon. The controller is configured to compare a first signal transmitted by the first beacon to a second signal transmitted by the second beacon, determine an environmental characteristic of the tunnel based on the first signal and the second signal, and determine an operating parameter for the tunneling device based on the environmental characteristic.
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公开(公告)号:US11328973B2
公开(公告)日:2022-05-10
申请号:US16912890
申请日:2020-06-26
Applicant: GENERAL ELECTRIC COMPANY
Inventor: David Richard Esler , Emad A. Andarawis
Abstract: A device comprises: a high temperature semiconductor device comprising a first surface, wherein the high temperature semiconductor device comprises an active area and a termination area disposed adjacent to the active area; an inorganic dielectric insulating layer disposed on the first surface, wherein the inorganic dielectric insulating layer fills a volume extending over an entirety of the termination area and comprises a thickness greater than or equal to 25 μm and less than or equal to 500 μm; and an electrical connector connecting the active area of the high temperature semiconductor device to an additional component of the device.
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公开(公告)号:US20210407878A1
公开(公告)日:2021-12-30
申请号:US16912890
申请日:2020-06-26
Applicant: GENERAL ELECTRIC COMPANY
Inventor: David Richard Esler , Emad A. Andarawis
Abstract: A device comprises: a high temperature semiconductor device comprising a first surface, wherein the high temperature semiconductor device comprises an active area and a termination area disposed adjacent to the active area; an inorganic dielectric insulating layer disposed on the first surface, wherein the inorganic dielectric insulating layer fills a volume extending over an entirety of the termination area and comprises a thickness greater than or equal to 25 μm and less than or equal to 500 μm; and an electrical connector connecting the active area of the high temperature semiconductor device to an additional component of the device.
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