TUNNELING AND NAVIGATION SYSTEMS INCLUDING CONTROLLER CONFIGURED TO DETERMINE ENVIRONMENTAL CHARACTERISTIC

    公开(公告)号:US20240159145A1

    公开(公告)日:2024-05-16

    申请号:US17981945

    申请日:2022-11-07

    CPC classification number: E21B7/30 E21B7/26 E21B49/00

    Abstract: A system for use in navigating and/or forming a tunnel includes a tunneling device including a body assembly and a fluid line coupled to the body assembly. The body assembly includes a first section and a second section that are configured to selectively adjust their size and move the body assembly through an underground location when a pressurized fluid is delivered to the body assembly through the fluid line. The system further includes at least one sensor coupled to the body assembly and/or the fluid line. The at least one sensor is configured to provide information related to an operating parameter of at least one of the first section of the body assembly or the second section of the body assembly. The system also includes a controller configured to determine an environmental characteristic of the tunnel based on the information provided by the at least one sensor.

    Power semiconductor devices with high temperature electrical insulation

    公开(公告)号:US11328973B2

    公开(公告)日:2022-05-10

    申请号:US16912890

    申请日:2020-06-26

    Abstract: A device comprises: a high temperature semiconductor device comprising a first surface, wherein the high temperature semiconductor device comprises an active area and a termination area disposed adjacent to the active area; an inorganic dielectric insulating layer disposed on the first surface, wherein the inorganic dielectric insulating layer fills a volume extending over an entirety of the termination area and comprises a thickness greater than or equal to 25 μm and less than or equal to 500 μm; and an electrical connector connecting the active area of the high temperature semiconductor device to an additional component of the device.

    POWER SEMICONDUCTOR DEVICES WITH HIGH TEMPERATURE ELECTRICAL INSULATION

    公开(公告)号:US20210407878A1

    公开(公告)日:2021-12-30

    申请号:US16912890

    申请日:2020-06-26

    Abstract: A device comprises: a high temperature semiconductor device comprising a first surface, wherein the high temperature semiconductor device comprises an active area and a termination area disposed adjacent to the active area; an inorganic dielectric insulating layer disposed on the first surface, wherein the inorganic dielectric insulating layer fills a volume extending over an entirety of the termination area and comprises a thickness greater than or equal to 25 μm and less than or equal to 500 μm; and an electrical connector connecting the active area of the high temperature semiconductor device to an additional component of the device.

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