公开(公告)号：US09954132B2

公开(公告)日：2018-04-24

申请号：US14526796

申请日：2014-10-29

Applicant: General Electric Company

Inventor： Arie Shahar ,  Yaron Glazer ,  Jeffrey Levy ,  Avishai Ofan ,  Rotem Har-Lavan

IPC: H01L31/08 ,  G01T1/24 ,  H01L31/0296 ,  H01L31/0224 ,  H01L31/18

CPC classification number: H01L31/085 ,  G01T1/24 ,  G01T1/249 ,  H01L31/022408 ,  H01L31/0296 ,  H01L31/02966 ,  H01L31/1828 ,  H01L31/1832 ,  H01L31/1864

Abstract: A radiation detector is provided including a cathode, an anode, and a semiconductor wafer. The semiconductor wafer has opposed first and second surfaces. The cathode is mounted to the first surface, and the anode is mounted to the second surface. The semiconductor wafer is configured to be biased by a voltage between the cathode and the anode to generate an electrical field in the semiconductor wafer and to generate electrical signals responsive to absorbed radiation. The electrical field has an intensity having at least one local maximum disposed proximate to a corresponding at least one of the first surface or second surface.

公开(公告)号：US20160126402A1

公开(公告)日：2016-05-05

申请号：US14526796

申请日：2014-10-29

Applicant: General Electric Company

Inventor： Arie Shahar ,  Yaron Glazer ,  Jeffrey Levy ,  Avishai Ofan ,  Rotem Har-Lavan

IPC: H01L31/08 ,  H01L31/18 ,  H01L31/0224 ,  G01T1/24 ,  H01L31/0296

CPC classification number: H01L31/085 ,  G01T1/24 ,  G01T1/249 ,  H01L31/022408 ,  H01L31/0296 ,  H01L31/02966 ,  H01L31/1828 ,  H01L31/1832 ,  H01L31/1864

Abstract: A radiation detector is provided including a cathode, an anode, and a semiconductor wafer. The semiconductor wafer has opposed first and second surfaces. The cathode is mounted to the first surface, and the anode is mounted to the second surface. The semiconductor wafer is configured to be biased by a voltage between the cathode and the anode to generate an electrical field in the semiconductor wafer and to generate electrical signals responsive to absorbed radiation. The electrical field has an intensity having at least one local maximum disposed proximate to a corresponding at least one of the first surface or second surface.

Abstract translation: 提供了包括阴极，阳极和半导体晶片的放射线检测器。 半导体晶片具有相对的第一和第二表面。 阴极安装到第一表面，并且阳极安装到第二表面。 半导体晶片被配置为由阴极和阳极之间的电压偏置，以在半导体晶片中产生电场并产生响应于吸收的辐射的电信号。 所述电场具有至少一个局部最大值的强度，其邻近于所述第一表面或所述第二表面中的至少一个。