公开(公告)号：US09379189B2

公开(公告)日：2016-06-28

申请号：US14644481

申请日：2015-03-11

Applicant: General Electric Company

Inventor： Avinash Srikrishnan Kashyap ,  Peter Michah Sandvik ,  Stephen Daley Arthur

IPC: H01L29/06 ,  H01L29/16 ,  H01L21/265 ,  H01L29/861 ,  H01L21/04 ,  H01L29/66 ,  H01L29/32

CPC classification number: H01L29/1608 ,  H01L21/0445 ,  H01L21/046 ,  H01L21/0475 ,  H01L21/265 ,  H01L29/06 ,  H01L29/0661 ,  H01L29/0692 ,  H01L29/32 ,  H01L29/6606 ,  H01L29/8618 ,  H01L2924/10272

Abstract: A transient voltage suppression (TVS) device includes a first layer of wide band gap semiconductor material formed of a first conductivity type material, a second layer of wide band gap semiconductor material formed of a second conductivity type material over at least a portion of the first layer and comprising an ion implanted material structure between 0.1 micrometers (μm) and 22.0 μm thick, the second layer operating using punch-through physics, and a third layer of wide band gap semiconductor material formed of the first conductivity type material over at least a portion of the second layer.

Abstract translation: 瞬态电压抑制（TVS）装置包括由第一导电类型材料形成的第一层宽带隙半导体材料，第二层宽带隙半导体材料，由第二导电类型材料形成，该第二导电类型材料在第一导电类型材料的至少一部分上 并且包括在0.1微米（μm）和22.0μm厚之间的离子注入材料结构，所述第二层使用穿透物理学操作，以及由第一导电类型材料形成的第三层宽带隙半导体材料，至少在 第二层的一部分。