摘要:
The invention provides a polyester bicomponent staple fiber comprising poly(trimethylene terephthalate) and at least one polymer selected from the group consisting of poly(ethylene terephthalate), poly(trimethylene terephthalate), and poly(tetramethylene terephthalate) or a combination of such members, said bicomponent staple fiber having: a) a scalloped oval cross-section shape having an aspect ratio a:b of about 2:1 to about 5:1 wherein ‘a’ is a fiber cross-section major axis length and ‘b’ is a fiber cross-section minor axis length; b) a polymer interface substantially perpendicular to the major axis; c) a cross-section configuration selected from the group consisting of side-by-side and eccentric sheath-core; d) a plurality of longitudinal grooves; and e) a groove ratio of about 1.05:1 to about 1.9:1. Additionally, the invention provides a spun yarn comprising cotton and the polyester bicomponent staple fiber of the invention, as well as fabrics and garments comprising the spun yarn of the invention.
摘要:
The invention provides a bicomponent staple fiber comprising poly(ethylene terephthalate) and poly(trimethylene terephthalate) wherein the bicomponent fiber has a substantially oval cross-section shape having an aspect ratio A:B of about 2:1 to about 5:1 wherein A is a fiber cross-section major axis length and B is a fiber cross-section minor axis length, a polymer interface substantially perpendicular to the major axis, a cross-section configuration selected from the group consisting of side-by-side and eccentric sheath-core, a tenacity at 10% elongation of about 1.1 cN/dtex to about 3.5 cN/dtex, a free-fiber length retention of about 40% to about 85%, and a tow crimp development value of about 30 to 55%, and a spun yarn comprising the bicomponent staple fiber.
摘要:
The invention provides a bicomponent staple fiber comprising poly(ethylene terephthalate) and poly(trimethylene terephthalate) wherein the bicomponent fiber has a substantially oval cross-section shape having an aspect ratio A:B of about 2:1 to about 5:1 wherein A is a fiber cross-section major axis length and B is a fiber cross-section minor axis length, a polymer interface substantially perpendicular to the major axis, a cross-section configuration selected from the group consisting of side-by-side and eccentric sheath-core, a tenacity at 10% elongation of about 1.1 cN/dtex to about 3.5 cN/dtex, a free-fiber length retention of about 40% to about 85%, and a tow crimp development value of about 30 to 55%, and a spun yarn comprising the bicomponent staple fiber.
摘要:
The invention provides a bicomponent polyester staple fiber and a spun yarn comprising cotton and a bicomponent polyester staple. The fiber of the invention exhibits unexpectedly good crimp and cardability properties, and the yarn has unusually high stretch characteristics and excellent uniformity.
摘要:
The invention provides a bicomponent polyester staple fiber and a spun yarn comprising cotton and a bicomponent polyester staple. The fiber of the invention exhibits unexpectedly good crimp and cardability properties, and the yarn has unusually high stretch characteristics and excellent uniformity.
摘要:
The invention provides a woven fabric comprising at least about 18% available stretch in at least a first direction and less than about 5% growth in at least the first direction, wherein the fabric consists essentially of staple fiber yarns in at least the first direction, and wherein the staple fiber yarns comprise poly(ethylene terephthalate) and poly(trimethylene terephthalate) bicomponent staple fiber.
摘要:
A system for testing a wireless access device having a plurality of radio modules is provided. The system includes a housing having an interior chamber. The interior chamber is adapted to receive a wireless access device. A plurality of probes are positioned for respective alignment with an antenna of a corresponding radio module of the wireless access device. The plurality of probes are adapted to receive radio signals from the wireless access device.
摘要:
Methods of treatment using Fzd8 extracellular domains (ECDs), Fzd8 ECD fusion molecules, and/or antibodies that bind Fzd8 are provided. Such methods include, but are not limited to, methods of treating obesity and obesity-related conditions. Fzd8 ECDs and Fzd8 ECD fusion molecules are also provided. Polypeptide and polynucleotide sequences, vectors, host cells, and compositions comprising or encoding such molecules are provided. Methods of making and using Fzd8 ECDs, Fzd8 ECD fusion molecules, and antibodies that bind Fzd8 are also provided.
摘要:
An anti-fuse memory cell having a variable thickness gate oxide. The variable thickness gate oxide has a thick gate oxide portion and a thin gate oxide portion, where the thing gate oxide portion has at least one dimension less than a minimum feature size of a process technology. The thin gate oxide can be rectangular in shape or triangular in shape. The anti-fuse transistor can be used in a two-transistor memory cell having an access transistor with a gate oxide substantially identical in thickness to the thick gate oxide of the variable thickness gate oxide of the anti-fuse transistor.
摘要:
A method is provided involving the growth of carbon nanotubes to provide giant resistance anisotropy or a low-k dielectric. The method comprises growing a plurality of one-dimensional nanostructures (18) orthogonal to a first conductive layer (14). A dielectric material (22, 32, 60) is formed covering the plurality of one-dimensional nanostructures and then etched to remove a portion of the dielectric material (22, 32, 60) to expose the ends (24, 34, 68) of the one-dimensional nanostructures (18). A second conductive layer (26, 36, 84) is formed over the dielectric material (22, 32, 60) to make contact with the ends (24, 34, 68) of the one-dimensional nanostructures (18). One or both of the first (14) and second (26, 36, 84) layers may be patterned for accessing individual or groups of the one-dimensional nanostructures (18). In another exemplary embodiment, the one-dimensional nanostructures (18) may be removed prior to forming the second layer (84), thereby creating a high-k dielectric layer (32) between the first and second layers (14, 84).