公开(公告)号：US07151060B2

公开(公告)日：2006-12-19

申请号：US10524871

申请日：2003-07-25

申请人： Georg Roters ,  Steffen Frigge ,  Sing Pin Tay ,  Yao Zhi Hu ,  Regina Hayn ,  Jens-Uwe Sachse ,  Erwin Schoer ,  Wilhelm Kegel

发明人： Georg Roters ,  Steffen Frigge ,  Sing Pin Tay ,  Yao Zhi Hu ,  Regina Hayn ,  Jens-Uwe Sachse ,  Erwin Schoer ,  Wilhelm Kegel

IPC分类号： H01L21/324 ,  H01L21/477 ,  H01L21/42 ,  H01L21/26

CPC分类号： H01L21/67115 ,  H01L21/28247 ,  H01L21/32105

摘要： A device for thermally treating semiconductor wafers having at least one silicon layer to be oxidized and a metal layer, preferably a tungsten layer, which is not to be oxidized. The inventive device comprises the following: at least one radiation source; a treatment chamber receiving the substrate, with at least one wall part located adjacent to the radiation sources and which is substantially transparent for the radiation of said radiation source; and at least one cover plate between the substrate and the wall part of the treatment chamber located adjacent to the radiation sources, the dimensions of said cover plate being selected such that it fully covers the transparent wall part of the treatment chamber in relation to the substrate in order to prevent material, comprising a metal, metal oxide or metal hydroxide such as tungsten, tungsten oxide or tungsten hydroxide, from said substrate from becoming deposited on or evaporating onto the transparent wall part of the treatment chamber.

公开(公告)号：US20060105584A1

公开(公告)日：2006-05-18

申请号：US10524871

申请日：2003-07-25

申请人： Georg Roters ,  Steffen Frigge ,  Sing Tay ,  Yao Zhi Hu ,  Regina Hayn ,  Jens-Uwe Sachse ,  Erwin Schoer ,  Wilhelm Kegel

发明人： Georg Roters ,  Steffen Frigge ,  Sing Tay ,  Yao Zhi Hu ,  Regina Hayn ,  Jens-Uwe Sachse ,  Erwin Schoer ,  Wilhelm Kegel

IPC分类号： H01L21/324

CPC分类号： H01L21/67115 ,  H01L21/28247 ,  H01L21/32105

摘要： A device for thermally treating semiconductor wafers having at least one silicon layer to be oxidized and a metal layer, preferably a tungsten layer, which is not to be oxidized. The inventive device comprises the following: at least one radiation source; a treatment chamber receiving the substrate, with at least one wall part located adjacent to the radiation sources and which is substantially transparent for the radiation of said radiation source; and at least one cover plate between the substrate and the wall part of the treatment chamber located adjacent to the radiation sources, the dimensions of said cover plate being selected such that it fully covers the transparent wall part of the treatment chamber in relation to the substrate in order to prevent material, comprising a metal, metal oxide or metal hydroxide such as tungsten, tungsten oxide or tungsten hydroxide, from said substrate from becoming deposited on or evaporating onto the transparent wall part of the treatment chamber.

摘要翻译： 一种用于热处理半导体晶片的装置，其具有至少一个待氧化的硅层和不被氧化的金属层，优选钨层。 本发明的装置包括：至少一个辐射源; 接收衬底的处理室，其中至少一个壁部分位于辐射源附近，并且对于所述辐射源的辐射基本上是透明的; 以及至少一个覆盖板，位于基板与位于辐射源附近的处理室的壁部分之间，所述盖板的尺寸被选择为使得其相对于基板完全覆盖处理室的透明壁部分 为了防止包含来自所述衬底的金属，金属氧化物或金属氢氧化物如钨，氧化钨或氢氧化钨的材料沉积在或蒸发到处理室的透明壁部分上。

公开(公告)号：US07094637B2

公开(公告)日：2006-08-22

申请号：US10694593

申请日：2003-10-27

申请人： Olaf Storbeck ,  Wilhelm Kegel ,  Jens-Uwe Sachse ,  Michael Stadtmüller ,  Regina Hayn ,  Erwin Schoer ,  Georg Roters ,  Steffen Frigge

发明人： Olaf Storbeck ,  Wilhelm Kegel ,  Jens-Uwe Sachse ,  Michael Stadtmüller ,  Regina Hayn ,  Erwin Schoer ,  Georg Roters ,  Steffen Frigge

IPC分类号： H01L21/337

CPC分类号： H01L21/32105 ,  H01L21/28061

摘要： During a selective oxidation of gate structures that includes a polycrystalline silicon layer and a tungsten layer, which is known per se, a vapor deposition of tungsten oxide is prevented or at least greatly reduced by a special process. The gate structure is acted on by a hydrogen-containing, nonaqueous inert gas before and, if appropriate, after a treatment step with a hydrogen/water mixture.

摘要翻译： 在包括本身已知的多晶硅层和钨层的栅极结构的选择性氧化期间，通过特殊工艺防止或至少大大降低了氧化钨的气相沉积。 栅极结构在氢/水混合物的处理步骤之前和（如果合适的话）之后由含氢非水惰性气体起作用。

公开(公告)号：US20090039458A1

公开(公告)日：2009-02-12

申请号：US11837127

申请日：2007-08-10

申请人： Philip Stopford ,  Henry Heidemeyer ,  Hans-Peter Moll ,  Olaf Storbeck ,  Regina Hayn ,  Wieland Pethe

发明人： Philip Stopford ,  Henry Heidemeyer ,  Hans-Peter Moll ,  Olaf Storbeck ,  Regina Hayn ,  Wieland Pethe

IPC分类号： H01L29/00 ,  H01L21/311 ,  H01L21/762

CPC分类号： H01L21/31662 ,  H01L21/02238 ,  H01L21/02299 ,  H01L21/3121 ,  H01L21/3125 ,  H01L21/316 ,  H01L21/76237

摘要： A method of fabricating an integrated device on a substrate with an exposed surface region is disclosed. One embodiment provides introducing a first component into the exposed surface region of the substrate. A material is provided on the exposed surface region. The material on the exposed surface region is cured and the first component release from the exposed surface region of the substrate.

摘要翻译： 公开了一种在具有暴露表面区域的基板上制造集成器件的方法。 一个实施例提供了将第一组分引入衬底的暴露表面区域。 在暴露的表面区域上提供材料。 暴露表面区域上的材料被固化，并且第一组分从基底的暴露表面区域释放。

公开(公告)号：US20080211115A1

公开(公告)日：2008-09-04

申请号：US11713568

申请日：2007-03-02

申请人： Olaf Storbeck ,  Regina Hayn

发明人： Olaf Storbeck ,  Regina Hayn

IPC分类号： H01L23/29

CPC分类号： H01L21/3144 ,  H01L21/0214 ,  H01L21/02238 ,  H01L21/02252 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/31662

摘要： In a method of forming an insulating layer on a silicon substrate, the silicon substrate is arranged inside a process chamber. An oxide layer is formed on the substrate's surface. An electrical field is applied and an oxygen particles containing plasma is provided above the substrate's surface. The electrical field accelerates the oxygen particles in the direction of the surface so that the oxygen particles penetrate inside the substrate and form said oxide layer. Thereafter, the stoichiometry of the oxide layer is modified. A nitrogen particles containing plasma is provided above the substrate's surface. The electrical field accelerates the nitrogen particles in the direction of the surface so that the nitrogen particles penetrate inside the oxide layer and modify the stoichiometry of the oxide layer. The step of forming the oxide layer and the step of modifying the stoichiometry are carried out inside the same process chamber.

摘要翻译： 在硅衬底上形成绝缘层的方法中，硅衬底布置在处理室的内部。 在基板的表面上形成氧化物层。 施加电场，并且在基板表面上方设置含有等离子体的氧颗粒。 电场在表面的方向上加速氧颗粒，使得氧颗粒穿透衬底内并形成所述氧化物层。 此后，改变氧化物层的化学计量。 含有等离子体的氮颗粒设置在基板的表面上方。 电场在表面的方向上加速氮颗粒，使得氮颗粒穿透氧化物层内部并改变氧化物层的化学计量。 形成氧化物层的步骤和改变化学计量的步骤在相同的处理室内进行。