摘要:
A method of fabricating an integrated device on a substrate with an exposed surface region is disclosed. One embodiment provides introducing a first component into the exposed surface region of the substrate. A material is provided on the exposed surface region. The material on the exposed surface region is cured and the first component release from the exposed surface region of the substrate.
摘要:
A sensor system for remote detection of a measurable variable includes a sensor, with a first resonator (5) which has a resonant frequency that is variable under the influence of the measurable variable; an antenna (1) for sending and receiving a modulated high-frequency signal; a modem (2) for coupling the first resonator (5) to the antenna; and a second resonator (3) that can be excited by a carrier frequency of the high-frequency signal. An interrogation unit generates an inquiry radio signal for exciting the two resonators and interrupts the broadcasting of the inquiry radio signal in order to receive a response radio signal broadcast by the sensor.
摘要:
A sensor system for detecting at least one dimensional variable of a rotating object (30) includes a plurality of sensors (33) disposed on the rotating object (30) that are sensitive to the dimensional variable and an antenna array (11) for supplying the sensors (33) with high-frequency energy and for receiving a high-frequency signal, modulated by the variable to be detected, from the sensors (33). The sensors are disposed on the object (30), distributed in the circumferential direction, and the antenna array (11) has a directional characteristic (34) for transmission and/or reception which is stationary with respect to a coordinate system not rotating with the object (30) and which includes only a subregion (32) of the object (30).
摘要:
The present invention relates to a method of forming an isolating trench of a semiconductor device with a dielectric material, and to a method of forming an isolating trench in a memory device.
摘要:
The present invention relates to a method of forming an isolating trench of a semiconductor device with a dielectric material, and to a method of forming an isolating trench in a memory device.