摘要:
In a known composite material with a fused silica matrix there are regions of silicon-containing phase embedded. In order to provide a composite material which is suitable for producing components for use in high-temperature processes for heat treatment even when exacting requirements are imposed on impermeability to gas and on purity, it is proposed in accordance with the invention that the composite material be impervious to gas, have a closed porosity of less than 0.5% and a specific density of at least 2.19 g/cm3, and at a temperature of 1000° C. have a spectral emissivity of at least 0.7 for wavelengths between 2 and 8 μm.
摘要翻译:在具有熔融二氧化硅基质的已知复合材料中,存在嵌入含硅相的区域。 为了提供一种适用于生产用于热处理的高温方法的组分的复合材料,即使当对气体的不渗透性和纯度施加严格要求时,根据本发明提出复合材料为 不透气体,具有小于0.5%的封闭孔隙率和至少2.19g / cm 3的比密度,并且在1000℃的温度下,波长在2和8μm之间的光谱发射率至少为0.7。
摘要:
In a known composite material with a fused silica matrix there are regions of silicon-containing phase embedded. In order to provide a composite material which is suitable for producing components for use in high-temperature processes for heat treatment even when exacting requirements are imposed on impermeability to gas and on purity, it is proposed in accordance with the invention that the composite material be impervious to gas, have a closed porosity of less than 0.5% and a specific density of at least 2.19 g/cm3, and at a temperature of 1000° C. have a spectral emissivity of at least 0.7 for wavelengths between 2 and 8 μm.
摘要:
In a known composite material with a fused silica matrix there are regions of silicon-containing phase embedded. In order to provide a composite material which is suitable for producing components for use in high-temperature processes for heat treatment even when exacting requirements are imposed on impermeability to gas and on purity, it is proposed in accordance with the invention that the composite material be impervious to gas, have a closed porosity of less than 0.5% and a specific density of at least 2.19 g/cm3, and at a temperature of 1000° C. have a spectral emissivity of at least 0.7 for wavelengths between 2 and 8 μm.
摘要:
A shaped body of amorphous silicon dioxide, which has a chemical purity of at least 99.9% and a cristobalite content of at most 1% and which is impermeable to gas, is known. To provide shaped bodies of amorphous silicon dioxide which have a high precision, which can be small or large in size and of simple to complicated shape, which have a chemical purity of at least 99.9%, are impermeable to gas above wall thicknesses of 1 mm, which have a high cold flexural strength, low thermal conductivity and low radiation of heat, which are thermal shock resistant and can be exposed repeatedly or also long-term to temperatures in the range from 1000.degree. to 1300.degree. C. and which can be welded in a sharply delineated manner without spreading joins and which have a low spectral transmission from the ultraviolet to the middle infrared spectral region, the shaped body is opaque, contains pores, at a wall thickness of 1 mm has a direct spectral transmission which is virtually constant in the wavelength range from .lambda.=190 nm to .lambda.=2650 nm and is below 10%, and it has a density which is at least 2.15 g/cm.sup.3. A process for producing such shaped bodies is also provided.
摘要:
Molded bodies of quartz glass have at least one surface area of transparent quartz glass, the exposed surfaces of which are smooth and which have a surface microroughness of less than 8 .mu.m. The base material has a chemical purity of at least 99.9% and a cristobalite content of no more than 1%; is gas-impermeable and opaque; and contains pores. At a wall thickness of 1 mm, the base material has a nearly uniform direct spectral transmission of less than 10% in the wavelength range of .lambda.=190-2,650 nm; and which has a density of at least 2.215 g/cm.sup.3. The transparent surface area is formed from base material by heating it to a temperature above 1,650.degree. C. The thickness of the transparent layer is at least 0.5 mm, and its direct spectral transmission in the wavelength range of .lambda.=6001-2,650 nm is at least 60% for a layer thickness of 1 mm.
摘要:
A shaped body of amorphous silicon dioxide, which has a chemical purity of at least 99.9% and a cristobalite content of at most 1% and which is impermeable to gas, is known. To provide shaped bodies of amorphous silicon dioxide which have a high precision, which can be small or large in size and of simple to complicated shape, which have a chemical purity of at least 99.9%, are impermeable to gas above wall thicknesses of 1 mm, which have a high cold flexural strength, low thermal conductivity and low radiation of heat, which are thermal shock resistant and can be exposed repeatedly or also long-term to temperatures in the range from 1000.degree. to 1300.degree. C. and which can be welded in a sharply delineated manner without spreading joins and which have a low spectral transmission from the ultraviolet to the middle infrared spectral region, the shaped body is opaque, contains pores, at a wall thickness of 1 mm has a direct spectral transmission which is virtually constant in the wavelength range from .lambda.=190 nm to .lambda.=2650 nm and is below 10%, and it has a density which is at least 2.15 g/cm.sup.3. A process for producing such shaped bodies is also provided.