公开(公告)号：US20080145771A1

公开(公告)日：2008-06-19

申请号：US12002275

申请日：2007-12-13

申请人： Gi-Sung Yoon ,  Hee-Bom Kim ,  Sun-Young Choi

发明人： Gi-Sung Yoon ,  Hee-Bom Kim ,  Sun-Young Choi

IPC分类号： G03F1/00

CPC分类号： G03F1/32 ,  G03F1/54 ,  G03F1/68 ,  G03F1/80

摘要： In an attenuated phase-shift mask (PSM) and a method of forming the same, a phase-shift layer and a light-shielding layer are sequentially stacked on a transparent substrate. The phase-shift layer and the light-shielding layer are sequentially removed from the substrate, to form a light-shielding pattern including a first opening and a phase-shift pattern including a second opening that is connected to the first opening and partially exposes the transparent substrate. Then, a transmitting portion is formed through the light-shielding pattern by partially removing the light-shielding pattern. The transmitting portion includes at least one portion of the phase-shift pattern on which a transmittance controller is formed. In one embodiment, the transmittance controller comprises a metal having a high absorption coefficient, and is formed through sputtering and diffusion processes. Accordingly, the intensity deviation between 0th and 1st order beams may be decreased, to thereby improve the processing margin of the exposure process.

摘要翻译： 在衰减相移掩模（PSM）及其形成方法中，相移层和遮光层依次层叠在透明基板上。 从基板顺序地移除相移层和遮光层，以形成包括第一开口和相移图案的遮光图案，该图案包括连接到第一开口的第二开口，并且部分地曝光 透明基板。 然后，通过部分去除遮光图案，通过遮光图案形成发送部。 发射部分包括形成有透射率控制器的相移图案的至少一部分。 在一个实施例中，透射率控制器包括具有高吸收系数的金属，并且通过溅射和扩散工艺形成。 因此，可以减小第0和第1级次级光束之间的强度偏差，从而改善曝光处理的处理余量。

公开(公告)号：US20110104593A1

公开(公告)日：2011-05-05

申请号：US12985761

申请日：2011-01-06

申请人： Gi-Sung Yoon ,  Hee-Bom Kim ,  Sun-Young Choi

发明人： Gi-Sung Yoon ,  Hee-Bom Kim ,  Sun-Young Choi

IPC分类号： G03F1/00

CPC分类号： G03F1/32 ,  G03F1/54 ,  G03F1/68 ,  G03F1/80

摘要： In an attenuated phase-shift mask (PSM) and a method of forming the same, a phase-shift layer and a light-shielding layer are sequentially stacked on a transparent substrate. The phase-shift layer and the light-shielding layer are sequentially removed from the substrate, to form a light-shielding pattern including a first opening and a phase-shift pattern including a second opening that is connected to the first opening and partially exposes the transparent substrate. Then, a transmitting portion is formed through the light-shielding pattern by partially removing the light-shielding pattern. The transmitting portion includes at least one portion of the phase-shift pattern on which a transmittance controller is formed. In one embodiment, the transmittance controller comprises a metal having a high absorption coefficient, and is formed through sputtering and diffusion processes. Accordingly, the intensity deviation between 0th and 1st order beams may be decreased, to thereby improve the processing margin of the exposure process.

摘要翻译： 在衰减相移掩模（PSM）及其形成方法中，相移层和遮光层依次层叠在透明基板上。 从基板顺序地移除相移层和遮光层，以形成包括第一开口和相移图案的遮光图案，该图案包括连接到第一开口的第二开口，并且部分地曝光 透明基板。 然后，通过部分去除遮光图案，通过遮光图案形成发送部。 发射部分包括形成有透射率控制器的相移图案的至少一部分。 在一个实施例中，透射率控制器包括具有高吸收系数的金属，并且通过溅射和扩散工艺形成。 因此，可以减小第0和第1级光束之间的强度偏差，从而提高曝光处理的处理余量。

公开(公告)号：US07897299B2

公开(公告)日：2011-03-01

申请号：US12002275

申请日：2007-12-13

申请人： Gi-Sung Yoon ,  Hee-Bom Kim ,  Sun-Young Choi

发明人： Gi-Sung Yoon ,  Hee-Bom Kim ,  Sun-Young Choi

IPC分类号： G03F1/00

CPC分类号： G03F1/32 ,  G03F1/54 ,  G03F1/68 ,  G03F1/80

摘要： In an attenuated phase-shift mask (PSM) and a method of forming the same, a phase-shift layer and a light-shielding layer are sequentially stacked on a transparent substrate. The phase-shift layer and the light-shielding layer are sequentially removed from the substrate, to form a light-shielding pattern including a first opening and a phase-shift pattern including a second opening that is connected to the first opening and partially exposes the transparent substrate. Then, a transmitting portion is formed through the light-shielding pattern by partially removing the light-shielding pattern. The transmitting portion includes at least one portion of the phase-shift pattern on which a transmittance controller is formed. In one embodiment, the transmittance controller comprises a metal having a high absorption coefficient, and is formed through sputtering and diffusion processes. Accordingly, the intensity deviation between 0th and 1st order beams may be decreased, to thereby improve the processing margin of the exposure process.

摘要翻译： 在衰减相移掩模（PSM）及其形成方法中，相移层和遮光层依次层叠在透明基板上。 从基板顺序地移除相移层和遮光层，以形成包括第一开口和相移图案的遮光图案，该图案包括连接到第一开口的第二开口，并且部分地曝光 透明基板。 然后，通过部分去除遮光图案，通过遮光图案形成发送部。 发射部分包括形成有透射率控制器的相移图案的至少一部分。 在一个实施例中，透射率控制器包括具有高吸收系数的金属，并且通过溅射和扩散工艺形成。 因此，可以减小第0和第1级光束之间的强度偏差，从而提高曝光处理的处理余量。

公开(公告)号：US08304173B2

公开(公告)日：2012-11-06

申请号：US12847274

申请日：2010-07-30

申请人： Sang-Yong Yu ,  Sung-Hyuck Kim ,  Gi-Sung Yoon

发明人： Sang-Yong Yu ,  Sung-Hyuck Kim ,  Gi-Sung Yoon

IPC分类号： G03F7/20

CPC分类号： H01L27/11543 ,  G03F1/70 ,  G03F7/70466 ,  H01L21/32139 ,  H01L27/10894 ,  H01L27/11526

摘要： The method of forming a pattern includes forming a first photosensitive layer pattern including a first pattern in a first region of a substrate and a second pattern in a second region of the substrate, by performing a first photolithography process using a photomask having a first mask region and a second mask region. The first pattern is transferred from the first mask region, and the second pattern is transferred from the second mask region. The method further includes forming a second photosensitive layer pattern including a third pattern in the second region of the substrate and a fourth pattern in the first region of the substrate, by performing a second photolithography process using the photomask. The third pattern is transferred from the first mask region, and the fourth pattern is transferred from the second mask region.

摘要翻译： 形成图案的方法包括在基板的第一区域中形成包括第一图案的第一感光层图案和在基板的第二区域中形成第二图案，通过使用具有第一掩模区域的光掩模进行第一光刻工艺 和第二掩模区域。 第一图案从第一掩模区域传送，并且第二图案从第二掩模区域传送。 该方法还包括通过使用光掩模进行第二光刻处理，在衬底的第二区域中形成包括第三图案的第二感光层图案和在衬底的第一区域中的第四图案。 第三图案从第一掩模区域传送，并且第四图案从第二掩模区域传送。

公开(公告)号：US20060147819A1

公开(公告)日：2006-07-06

申请号：US11325149

申请日：2006-01-03

申请人： Gi-Sung Yoon ,  In-Kyun Shin ,  Sung-Hyuck Kim

发明人： Gi-Sung Yoon ,  In-Kyun Shin ,  Sung-Hyuck Kim

IPC分类号： G03C5/00 ,  G03F1/00

CPC分类号： G03F1/34

摘要： An embodiment of a method of fabricating a chrome-less phase shift mask includes forming a hard mask film on a surface of a mask body having a trench circuit area and a mesa circuit area. The hard mask film is patterned. The mask body is anisotropically etched using the hard mask pattern as an etching mask to form pre-pitting patterns in the trench circuit area. The hard mask film having the hard mask pattern is again patterned to form a mesa hard mask pattern on the mesa circuit area and to expose a top surface of the trench circuit area. The mask body is anisotropically etched to form phase shift hillock patterns in the mesa circuit area and phase shift pitting patterns in the trench circuit area. Phase shift pitting patterns and phase shift hillock patterns may be formed on a single body.

公开(公告)号：US20110053096A1

公开(公告)日：2011-03-03

申请号：US12847274

申请日：2010-07-30

申请人： Sang-Yong Yu ,  Sung-Hyuck Kim ,  Gi-Sung Yoon

发明人： Sang-Yong Yu ,  Sung-Hyuck Kim ,  Gi-Sung Yoon

IPC分类号： G03F7/20

CPC分类号： H01L27/11543 ,  G03F1/70 ,  G03F7/70466 ,  H01L21/32139 ,  H01L27/10894 ,  H01L27/11526

摘要： The method of forming a pattern includes forming a first photosensitive layer pattern including a first pattern in a first region of a substrate and a second pattern in a second region of the substrate, by performing a first photolithography process using a photomask having a first mask region and a second mask region. The first pattern is transferred from the first mask region, and the second pattern is transferred from the second mask region. The method further includes forming a second photosensitive layer pattern including a third pattern in the second region of the substrate and a fourth pattern in the first region of the substrate, by performing a second photolithography process using the photomask. The third pattern is transferred from the first mask region, and the fourth pattern is transferred from the second mask region

摘要翻译： 形成图案的方法包括在基板的第一区域中形成包括第一图案的第一感光层图案和在基板的第二区域中形成第二图案，通过使用具有第一掩模区域的光掩模进行第一光刻工艺 和第二掩模区域。 第一图案从第一掩模区域传送，并且第二图案从第二掩模区域传送。 该方法还包括通过使用光掩模进行第二光刻处理，在衬底的第二区域中形成包括第三图案的第二感光层图案和在衬底的第一区域中的第四图案。 第三图案从第一掩模区域传送，并且第四图案从第二掩模区域传送

公开(公告)号：US07595136B2

公开(公告)日：2009-09-29

申请号：US11325149

申请日：2006-01-03

申请人： Gi-Sung Yoon ,  In-Kyun Shin ,  Sung-Hyuck Kim

发明人： Gi-Sung Yoon ,  In-Kyun Shin ,  Sung-Hyuck Kim

IPC分类号： G03F1/00

CPC分类号： G03F1/34

摘要： An embodiment of a method of fabricating a chrome-less phase shift mask includes forming a hard mask film on a surface of a mask body having a trench circuit area and a mesa circuit area. The hard mask film is patterned. The mask body is anisotropically etched using the hard mask pattern as an etching mask to form pre-pitting patterns in the trench circuit area. The hard mask film having the hard mask pattern is again patterned to form a mesa hard mask pattern on the mesa circuit area and to expose a top surface of the trench circuit area. The mask body is anisotropically etched to form phase shift hillock patterns in the mesa circuit area and phase shift pitting patterns in the trench circuit area. Phase shift pitting patterns and phase shift hillock patterns may be formed on a single body.

摘要翻译： 制造无铬相移掩模的方法的实施例包括在具有沟槽电路区域和台面电路区域的掩模体的表面上形成硬掩模膜。 硬掩模膜被图案化。 使用硬掩模图案作为蚀刻掩模对掩模体进行各向异性蚀刻，以在沟槽电路区域中形成预点蚀图案。 具有硬掩模图案的硬掩模膜再次被图案化以在台面电路区域上形成台面硬掩模图案并且暴露沟槽电路区域的顶表面。 掩模体被各向异性地蚀刻以在台面电路区域中形成相移小丘图案，并在沟槽电路区域中形成相移点蚀图案。 相移点蚀图案和相移小丘图案可以形成在单个主体上。