公开(公告)号：US20110053096A1

公开(公告)日：2011-03-03

申请号：US12847274

申请日：2010-07-30

申请人： Sang-Yong Yu ,  Sung-Hyuck Kim ,  Gi-Sung Yoon

发明人： Sang-Yong Yu ,  Sung-Hyuck Kim ,  Gi-Sung Yoon

IPC分类号： G03F7/20

CPC分类号： H01L27/11543 ,  G03F1/70 ,  G03F7/70466 ,  H01L21/32139 ,  H01L27/10894 ,  H01L27/11526

摘要： The method of forming a pattern includes forming a first photosensitive layer pattern including a first pattern in a first region of a substrate and a second pattern in a second region of the substrate, by performing a first photolithography process using a photomask having a first mask region and a second mask region. The first pattern is transferred from the first mask region, and the second pattern is transferred from the second mask region. The method further includes forming a second photosensitive layer pattern including a third pattern in the second region of the substrate and a fourth pattern in the first region of the substrate, by performing a second photolithography process using the photomask. The third pattern is transferred from the first mask region, and the fourth pattern is transferred from the second mask region

摘要翻译： 形成图案的方法包括在基板的第一区域中形成包括第一图案的第一感光层图案和在基板的第二区域中形成第二图案，通过使用具有第一掩模区域的光掩模进行第一光刻工艺 和第二掩模区域。 第一图案从第一掩模区域传送，并且第二图案从第二掩模区域传送。 该方法还包括通过使用光掩模进行第二光刻处理，在衬底的第二区域中形成包括第三图案的第二感光层图案和在衬底的第一区域中的第四图案。 第三图案从第一掩模区域传送，并且第四图案从第二掩模区域传送

公开(公告)号：US08304173B2

公开(公告)日：2012-11-06

申请号：US12847274

申请日：2010-07-30

申请人： Sang-Yong Yu ,  Sung-Hyuck Kim ,  Gi-Sung Yoon

发明人： Sang-Yong Yu ,  Sung-Hyuck Kim ,  Gi-Sung Yoon

IPC分类号： G03F7/20

CPC分类号： H01L27/11543 ,  G03F1/70 ,  G03F7/70466 ,  H01L21/32139 ,  H01L27/10894 ,  H01L27/11526

摘要： The method of forming a pattern includes forming a first photosensitive layer pattern including a first pattern in a first region of a substrate and a second pattern in a second region of the substrate, by performing a first photolithography process using a photomask having a first mask region and a second mask region. The first pattern is transferred from the first mask region, and the second pattern is transferred from the second mask region. The method further includes forming a second photosensitive layer pattern including a third pattern in the second region of the substrate and a fourth pattern in the first region of the substrate, by performing a second photolithography process using the photomask. The third pattern is transferred from the first mask region, and the fourth pattern is transferred from the second mask region.

摘要翻译： 形成图案的方法包括在基板的第一区域中形成包括第一图案的第一感光层图案和在基板的第二区域中形成第二图案，通过使用具有第一掩模区域的光掩模进行第一光刻工艺 和第二掩模区域。 第一图案从第一掩模区域传送，并且第二图案从第二掩模区域传送。 该方法还包括通过使用光掩模进行第二光刻处理，在衬底的第二区域中形成包括第三图案的第二感光层图案和在衬底的第一区域中的第四图案。 第三图案从第一掩模区域传送，并且第四图案从第二掩模区域传送。

公开(公告)号：US07595136B2

公开(公告)日：2009-09-29

申请号：US11325149

申请日：2006-01-03

申请人： Gi-Sung Yoon ,  In-Kyun Shin ,  Sung-Hyuck Kim

发明人： Gi-Sung Yoon ,  In-Kyun Shin ,  Sung-Hyuck Kim

IPC分类号： G03F1/00

CPC分类号： G03F1/34

摘要： An embodiment of a method of fabricating a chrome-less phase shift mask includes forming a hard mask film on a surface of a mask body having a trench circuit area and a mesa circuit area. The hard mask film is patterned. The mask body is anisotropically etched using the hard mask pattern as an etching mask to form pre-pitting patterns in the trench circuit area. The hard mask film having the hard mask pattern is again patterned to form a mesa hard mask pattern on the mesa circuit area and to expose a top surface of the trench circuit area. The mask body is anisotropically etched to form phase shift hillock patterns in the mesa circuit area and phase shift pitting patterns in the trench circuit area. Phase shift pitting patterns and phase shift hillock patterns may be formed on a single body.

摘要翻译： 制造无铬相移掩模的方法的实施例包括在具有沟槽电路区域和台面电路区域的掩模体的表面上形成硬掩模膜。 硬掩模膜被图案化。 使用硬掩模图案作为蚀刻掩模对掩模体进行各向异性蚀刻，以在沟槽电路区域中形成预点蚀图案。 具有硬掩模图案的硬掩模膜再次被图案化以在台面电路区域上形成台面硬掩模图案并且暴露沟槽电路区域的顶表面。 掩模体被各向异性地蚀刻以在台面电路区域中形成相移小丘图案，并在沟槽电路区域中形成相移点蚀图案。 相移点蚀图案和相移小丘图案可以形成在单个主体上。

公开(公告)号：US20060147819A1

公开(公告)日：2006-07-06

申请号：US11325149

申请日：2006-01-03

申请人： Gi-Sung Yoon ,  In-Kyun Shin ,  Sung-Hyuck Kim

发明人： Gi-Sung Yoon ,  In-Kyun Shin ,  Sung-Hyuck Kim

IPC分类号： G03C5/00 ,  G03F1/00

CPC分类号： G03F1/34

摘要： An embodiment of a method of fabricating a chrome-less phase shift mask includes forming a hard mask film on a surface of a mask body having a trench circuit area and a mesa circuit area. The hard mask film is patterned. The mask body is anisotropically etched using the hard mask pattern as an etching mask to form pre-pitting patterns in the trench circuit area. The hard mask film having the hard mask pattern is again patterned to form a mesa hard mask pattern on the mesa circuit area and to expose a top surface of the trench circuit area. The mask body is anisotropically etched to form phase shift hillock patterns in the mesa circuit area and phase shift pitting patterns in the trench circuit area. Phase shift pitting patterns and phase shift hillock patterns may be formed on a single body.

公开(公告)号：US07335449B2

公开(公告)日：2008-02-26

申请号：US10870442

申请日：2004-06-18

申请人： Sung-Hyuck Kim ,  In-Kyun Shin ,  Dong-Hoon Chung

发明人： Sung-Hyuck Kim ,  In-Kyun Shin ,  Dong-Hoon Chung

IPC分类号： G03F1/00 ,  G03F1/08

CPC分类号： G03F1/36

摘要： A mask and a method of forming the mask obviate optical proximity effects. The mask includes a light-shielding layer on a transparent substrate. The light-shielding layer is patterned to form a main pattern and a phantom pattern. The main and phantom patterns each have a light shielding portion and a light-transmitting portion. The pitch of the features constituting the phantom pattern is identical to the pitch of the features constituting the main pattern. The shape of the light-transmitting features of the phantom pattern region is identical to the shape of the light-transmitting features of the main pattern region.

摘要翻译： 掩模和形成掩模的方法消除了光学邻近效应。 掩模在透明基板上包括遮光层。 图案化遮光层以形成主图案和幻影图案。 主要和幻影图案都具有遮光部分和透光部分。 构成幻影图案的特征的间距与构成主图案的特征的间距相同。 幻影图案区域的透光特征的形状与主图案区域的透光特征的形状相同。

公开(公告)号：US08795929B2

公开(公告)日：2014-08-05

申请号：US13549895

申请日：2012-07-16

申请人： Sung-Hyuck Kim ,  In-Kyun Shin ,  Bum-Hyun An

发明人： Sung-Hyuck Kim ,  In-Kyun Shin ,  Bum-Hyun An

IPC分类号： G03F1/00

CPC分类号： G03F1/64

摘要： A pellicle including a frame having a square shape; and a buffer zone in the frame, the buffer zone dividing a lower surface of the frame into a plurality of portions.

摘要翻译： 防护薄膜组件，包括具有正方形的框架; 和缓冲区，缓冲区将框架的下表面分成多个部分。

公开(公告)号：US20050064300A1

公开(公告)日：2005-03-24

申请号：US10870442

申请日：2004-06-18

申请人： Sung-Hyuck Kim ,  In-Kyun Shin ,  Dong-Hoon Chung

发明人： Sung-Hyuck Kim ,  In-Kyun Shin ,  Dong-Hoon Chung

IPC分类号： H01L21/027 ,  G03C5/00 ,  G03F1/14 ,  G03F9/00

CPC分类号： G03F1/36

摘要： A mask and a method of forming the mask obviate optical proximity effects. The mask includes a light-shielding layer on a transparent substrate. The light-shielding layer is patterned to form a main pattern and a phantom pattern. The main and phantom patterns each have a light shielding portion and a light-transmitting portion. The pitch of the features constituting the phantom pattern is identical to the pitch of the features constituting the main pattern. The shape of the light-transmitting features of the phantom pattern region is identical to the shape of the light-transmitting features of the main pattern region.

摘要翻译： 掩模和形成掩模的方法消除了光学邻近效应。 掩模在透明基板上包括遮光层。 图案化遮光层以形成主图案和幻影图案。 主要和幻影图案都具有遮光部分和透光部分。 构成幻影图案的特征的间距与构成主图案的特征的间距相同。 幻影图案区域的透光特征的形状与主图案区域的透光特征的形状相同。

公开(公告)号：US20100209826A1

公开(公告)日：2010-08-19

申请号：US12656747

申请日：2010-02-16

申请人： Sung-Hyuck Kim ,  In-Kyun Shin

发明人： Sung-Hyuck Kim ,  In-Kyun Shin

IPC分类号： G03F1/00

CPC分类号： G03F1/60 ,  G03F1/72

摘要： An apparatus and method for improving global flatness of a photomask is provided. The apparatus may include an adsorbing plate including vacuuming holes on one surface thereof, the adsorbing plate being adapted to adsorb the photomask thereon, a photomask supporting part including a plurality of supporting portions adapted to support the photomask and supporting arms on which the supporting portions are disposed, and a pressing plate including a pressing frame adapted to apply pressure to one surface of the photomask.

摘要翻译： 提供了一种用于提高光掩模的全局平坦度的装置和方法。 该装置可以包括一个吸附板，该吸附板在其一个表面上包括抽吸孔，吸附板适于吸附其上的光掩模，光掩模支撑部分包括适于支撑光掩模的多个支撑部分和支撑部分 以及包括适于向光掩模的一个表面施加压力的按压框架的压板。