公开(公告)号：US10096966B2

公开(公告)日：2018-10-09

申请号：US15290518

申请日：2016-10-11

Applicant: Gigaphoton Inc.

Inventor： Akira Suwa ,  Kouji Kakizaki ,  Hiroaki Tsushima ,  Tomoyuki Ohkubo ,  Hiroshi Umeda ,  Hisakazu Katsuumi

IPC: H01S3/097 ,  H01G4/14 ,  H01G4/258 ,  H01G4/30 ,  H01S3/041 ,  H01S3/225 ,  H01S3/03 ,  H01S3/036 ,  H01S3/038

Abstract: A gas laser device may include: a laser chamber containing laser gas; a first discharge electrode disposed in the laser chamber; a second discharge electrode disposed to face the first discharge electrode in the laser chamber; and a condenser including a polyimide dielectric and configured to supply power to between the first discharge electrode and the second discharge electrode.

公开(公告)号：US10651049B2

公开(公告)日：2020-05-12

申请号：US16055325

申请日：2018-08-06

Applicant: KYUSHU UNIVERSITY, NATIONAL UNIVERSITY CORPORATION ,  GIGAPHOTON INC.

Inventor： Hiroshi Ikenoue ,  Tomoyuki Ohkubo ,  Osamu Wakabayashi

IPC: H01L21/324 ,  B23K26/03 ,  B23K26/066 ,  B23K26/06 ,  B23K26/08 ,  H01L21/02 ,  B23K26/354 ,  H01L21/268 ,  B23K26/064 ,  B23K26/073 ,  H01L21/263 ,  B23K103/00 ,  B23K101/40

Abstract: A laser annealing device includes: a CW laser device configured to emit continuous wave laser light caused by continuous oscillation to preheat the amorphous silicon; a pulse laser device configured to emit the pulse laser light toward the preheated amorphous silicon; an optical system configured to guide the continuous wave laser light and the pulse laser light to the amorphous silicon; and a control unit configured to control an irradiation energy density of the continuous wave laser light so as to preheat the amorphous silicon to have a predetermined target temperature less than a melting point thereof, and configured to control at least one of a fluence and a number of pulses of the pulse laser light so as to crystallize the preheated amorphous silicon.