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公开(公告)号：US20130146994A1
公开(公告)日：2013-06-13
申请号：US13639423
申请日：2011-04-15
CPC分类号： B81C1/00269 , B81B7/0032 , B81B2201/0235 , B81B2201/0242 , B81C2201/019 , B81C2201/0191 , B81C2203/0118 , B81C2203/031 , B81C2203/058
摘要： A method for providing hermetic sealing within a silicon-insulator composite wafer for manufacturing a hermetically sealed structure, comprising the steps of: patterning a first silicon wafer to have one or more recesses that extend at least partially through the first silicon wafer; filling said recesses with an insulator material able to be anodically bonded to silicon to form a first composite wafer having a plurality of silicon-insulator interfaces and a first contacting surface consisting of insulator material; and using an anodic bonding technique on the first contacting surface and an opposing second contacting surface to create hermetic sealing between the silicon-insulator interfaces, wherein the second contacting surface consists of silicon.
摘要翻译： 一种用于在用于制造密封结构的硅绝缘体复合晶片内提供气密密封的方法，包括以下步骤：将第一硅晶片图案化成具有至少部分延伸穿过第一硅晶片的一个或多个凹槽; 用能够与硅阳极结合的绝缘体材料填充所述凹槽，以形成具有多个硅 - 绝缘体界面的第一复合晶片和由绝缘体材料组成的第一接触表面; 以及在所述第一接触表面和相对的第二接触表面上使用阳极接合技术以在所述硅 - 绝缘体界面之间形成气密密封，其中所述第二接触表面由硅组成。
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公开(公告)号：US09051172B2
公开(公告)日：2015-06-09
申请号：US13639423
申请日：2011-04-15
CPC分类号： B81C1/00269 , B81B7/0032 , B81B2201/0235 , B81B2201/0242 , B81C2201/019 , B81C2201/0191 , B81C2203/0118 , B81C2203/031 , B81C2203/058
摘要： A method for providing hermetic sealing within a silicon-insulator composite wafer for manufacturing a hermetically sealed structure, comprising the steps of: patterning a first silicon wafer to have one or more recesses that extend at least partially through the first silicon wafer; filling said recesses with an insulator material able to be anodically bonded to silicon to form a first composite wafer having a plurality of silicon-insulator interfaces and a first contacting surface consisting of insulator material; and using an anodic bonding technique on the first contacting surface and an opposing second contacting surface to create hermetic sealing between the silicon-insulator interfaces, wherein the second contacting surface consists of silicon.
摘要翻译： 一种用于在用于制造密封结构的硅绝缘体复合晶片内提供气密密封的方法，包括以下步骤：将第一硅晶片图案化成具有至少部分延伸穿过第一硅晶片的一个或多个凹槽; 用能够与硅阳极结合的绝缘体材料填充所述凹槽，以形成具有多个硅 - 绝缘体界面的第一复合晶片和由绝缘体材料组成的第一接触表面; 以及在所述第一接触表面和相对的第二接触表面上使用阳极接合技术以在所述硅 - 绝缘体界面之间形成气密密封，其中所述第二接触表面由硅组成。
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公开(公告)号：US20070132048A1
公开(公告)日：2007-06-14
申请号：US11539774
申请日：2006-10-09
申请人： Trond Westgaard
发明人： Trond Westgaard
IPC分类号： H01L29/84
CPC分类号： B81C1/00269 , B81C2201/019 , B81C2203/031
摘要： A multi-layer device includes a first layer with a micro-mechanical component formed thereon. The device also includes first and second sealing layers, with the first layer sandwiched between the first and second sealing layers and anodically bonded thereto such that a cavity is defined therein. An electrode is provided within the cavity for reducing UV emission. The electrode is formed on at least a part of a surface of the second sealing layer internal to the cavity and arranged to be in electrical contact with the first layer.
摘要翻译： 多层器件包括其上形成有微机械部件的第一层。 该装置还包括第一和第二密封层，其中第一层夹在第一和第二密封层之间并阳极结合到其上，使得在其中限定空腔。 在腔内设置电极，以减少紫外线发射。 电极形成在腔的内部的第二密封层的表面的至少一部分上，并被布置成与第一层电接触。
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