公开(公告)号：US09670060B2

公开(公告)日：2017-06-06

申请号：US13128288

申请日：2009-11-13

申请人： Ali Dhinojwala ,  Sunny Sethi

发明人： Ali Dhinojwala ,  Sunny Sethi

IPC分类号： D06N7/04 ,  B32B9/00 ,  D01F9/12 ,  B81C1/00 ,  C09J7/00 ,  C01B31/02 ,  B82Y30/00 ,  B82Y40/00

CPC分类号： B81C1/00206 ,  B81C1/00111 ,  B81C2201/0191 ,  B82Y30/00 ,  B82Y40/00 ,  C01B31/0226 ,  C01B32/16 ,  C09J7/00 ,  C09J2201/626 ,  Y10T156/109 ,  Y10T428/24008 ,  Y10T428/24364 ,  Y10T428/24893 ,  Y10T428/249921 ,  Y10T428/25 ,  Y10T428/26 ,  Y10T428/29 ,  Y10T428/2913 ,  Y10T428/298 ,  Y10T428/30 ,  Y10T442/2213 ,  Y10T442/2221

摘要： This is provided a hydrophobic or superhydrophobic surface configuration and method of forming a hydrophobic or superhydrophobic material on a metallic substrate. The surface configuration comprises a metallic substrate having a carbon nanotube/carbon fibers configuration grown thereon, with the carbon nanotubes/carbon fibers configuration having a heirarchial structure formed to have a predetermined roughness in association with the surface. The method comprises providing a metallic substrate having a predetermined configuration, and growing a plurality of carbon nanotubes/fibers or other nanostructures formed into a predetermined architecture supported on the substrate.

公开(公告)号：US20170057812A1

公开(公告)日：2017-03-02

申请号：US15220234

申请日：2016-07-26

申请人： GRAPHENEA S.A.

发明人： M. Amaia ZURUTUZA ELORZA ,  M. Alba CENTENO PEREZ

IPC分类号： B81C1/00

CPC分类号： H01L21/02527 ,  B32B37/025 ,  B32B38/0036 ,  B32B38/10 ,  B81C1/00158 ,  B81C2201/0133 ,  B81C2201/0176 ,  B81C2201/0191 ,  B81C2201/053 ,  C01B32/194 ,  H01L21/02664

摘要： A method of transferring graphene onto a target substrate having cavities and/or holes or onto a substrate having at least one water soluble layer is disclosed. It comprises the steps of: applying a protective layer (4) onto a sample comprising a stack (20) formed by a graphene monolayer (2) grown on a metal foil or on a metal thin film on a silicon substrate (1); attaching to said protective layer (4) a frame (5) comprising at least one outer border and at least one inner border, said frame (5) comprising a substrate and a thermal release adhesive polymer layer, the frame (5) providing integrity and allowing the handling of said sample; removing or detaching said metal foil or metal thin film on a silicon substrate (1); once the metal foil or metal thin film on a silicon substrate (1) has been removed or detached, drying the sample; depositing the sample onto a substrate (7); removing said frame (5) by cutting through said protective layer (4) at said at least one inner border of the frame (5) or by thermal release.

摘要翻译： 公开了一种将石墨烯转移到具有空穴和/或空穴的目标基底上或具有至少一个水溶性层的基底上的方法。 其包括以下步骤：将保护层（4）施加到包含由在金属箔上生长的石墨烯单层（2）或在硅衬底（1）上的金属薄膜上形成的堆叠（20）的样品上; 附接到所述保护层（4）包括至少一个外边界和至少一个内边界的框架（5），所述框架（5）包括基底和热释放粘合聚合物层，所述框架（5）提供完整性和 允许处理所述样品; 在硅衬底（1）上移除或分离所述金属箔或金属薄膜; 一旦硅衬底（1）上的金属箔或金属薄膜被去除或分离，干燥样品; 将样品沉积到衬底（7）上; 通过在框架（5）的所述至少一个内边界处切割所述保护层（4）或通过热释放来移除所述框架（5）。

公开(公告)号：US20150215706A1

公开(公告)日：2015-07-30

申请号：US14684565

申请日：2015-04-13

申请人： Sand 9, Inc.

发明人： Andrew Sparks ,  Todd M. Borkowski

IPC分类号： H04R17/02 ,  G01L9/00

CPC分类号： H04R17/02 ,  B81B3/0018 ,  B81B2201/0257 ,  B81C1/00158 ,  B81C2201/0191 ,  G01L9/008 ,  H04R2201/003

摘要： Mechanical resonating structures, as well as related devices and methods of manufacture. The mechanical resonating structures can be microphones, each including a diaphragm and a piezoelectric stack. The diaphragm can have one or more openings formed therethrough to enable the determination of an acoustic pressure being applied to the diaphragm through signals emitted by the piezoelectric stack.

摘要翻译： 机械共振结构，以及相关设备和制造方法。 机械谐振结构可以是麦克风，每个麦克风包括隔膜和压电叠层。 隔膜可以具有穿过其中形成的一个或多个开口，以使得能够通过由压电叠层发射的信号来确定施加到隔膜的声压。

公开(公告)号：US20140361409A1

公开(公告)日：2014-12-11

申请号：US14246962

申请日：2014-04-07

申请人： THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS

发明人： John A. ROGERS ,  Ralph G. NUZZO ,  Matthew MEITL ,  Heung Cho KO ,  Jongseung YOON ,  Etienne MENARD ,  Alfred J. BACA

IPC分类号： H01L31/0735 ,  H01L31/0304 ,  H01L31/18

CPC分类号： H01L31/0735 ,  B81C1/0046 ,  B81C2201/0191 ,  B82Y10/00 ,  B82Y20/00 ,  B82Y40/00 ,  H01L21/7813 ,  H01L29/155 ,  H01L29/20 ,  H01L31/03046 ,  H01L31/068 ,  H01L31/0687 ,  H01L31/072 ,  H01L31/0725 ,  H01L31/184 ,  H01L31/1844 ,  H01L33/0079 ,  H01L2924/0002 ,  Y02E10/52 ,  Y02E10/544 ,  Y02E10/547 ,  Y02P70/521 ,  Y10T156/1195 ,  H01L2924/00

摘要： Provided are methods for making a device or device component by providing a multi layer structure having a plurality of functional layers and a plurality of release layers and releasing the functional layers from the multilayer structure by separating one or more of the release layers to generate a plurality of transferable structures. The transferable structures are printed onto a device substrate or device component supported by a device substrate. The methods and systems provide means for making high-quality and low-cost photovoltaic devices, transferable semiconductor structures, (opto-)electronic devices and device components.

摘要翻译： 提供了通过提供具有多个功能层和多个释放层的多层结构来制造器件或器件部件的方法，并且通过分离一个或多个释放层从多层结构释放功能层以产生多个 的可转移结构。 可转移结构被印刷到由器件衬底支撑的器件衬底或器件部件上。 该方法和系统提供制造高质量和低成本的光伏器件，可转移的半导体结构（光电）器件和器件部件的手段。

公开(公告)号：US20130146994A1

公开(公告)日：2013-06-13

申请号：US13639423

申请日：2011-04-15

申请人： Gjermund Kittilsland ,  Daniel Lapadatu ,  Sissel Jacobsen ,  Trond Westgaard

发明人： Gjermund Kittilsland ,  Daniel Lapadatu ,  Sissel Jacobsen ,  Trond Westgaard

IPC分类号： B81C1/00 ,  B81B7/00

CPC分类号： B81C1/00269 ,  B81B7/0032 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81C2201/019 ,  B81C2201/0191 ,  B81C2203/0118 ,  B81C2203/031 ,  B81C2203/058

摘要： A method for providing hermetic sealing within a silicon-insulator composite wafer for manufacturing a hermetically sealed structure, comprising the steps of: patterning a first silicon wafer to have one or more recesses that extend at least partially through the first silicon wafer; filling said recesses with an insulator material able to be anodically bonded to silicon to form a first composite wafer having a plurality of silicon-insulator interfaces and a first contacting surface consisting of insulator material; and using an anodic bonding technique on the first contacting surface and an opposing second contacting surface to create hermetic sealing between the silicon-insulator interfaces, wherein the second contacting surface consists of silicon.

摘要翻译： 一种用于在用于制造密封结构的硅绝缘体复合晶片内提供气密密封的方法，包括以下步骤：将第一硅晶片图案化成具有至少部分延伸穿过第一硅晶片的一个或多个凹槽; 用能够与硅阳极结合的绝缘体材料填充所述凹槽，以形成具有多个硅 - 绝缘体界面的第一复合晶片和由绝缘体材料组成的第一接触表面; 以及在所述第一接触表面和相对的第二接触表面上使用阳极接合技术以在所述硅 - 绝缘体界面之间形成气密密封，其中所述第二接触表面由硅组成。

公开(公告)号：US08273603B2

公开(公告)日：2012-09-25

申请号：US12407252

申请日：2009-03-19

申请人： Livia M. Racz ,  Gary B. Tepolt ,  Jeffrey C. Thompson ,  Thomas A. Langdo ,  Andrew J. Mueller

发明人： Livia M. Racz ,  Gary B. Tepolt ,  Jeffrey C. Thompson ,  Thomas A. Langdo ,  Andrew J. Mueller

IPC分类号： H05K1/00 ,  H01L21/82 ,  H01L21/00

CPC分类号： H01L21/486 ,  B81B2207/012 ,  B81C1/00333 ,  B81C2201/019 ,  B81C2201/0191 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/13 ,  H01L23/49827 ,  H01L24/19 ,  H01L24/24 ,  H01L24/82 ,  H01L25/105 ,  H01L2221/68359 ,  H01L2221/68377 ,  H01L2224/04105 ,  H01L2224/24227 ,  H01L2224/73267 ,  H01L2224/8203 ,  H01L2224/92144 ,  H01L2224/9222 ,  H01L2225/1035 ,  H01L2225/1058 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01074 ,  H01L2924/01084 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/1461 ,  H01L2924/15151 ,  H01L2924/15153 ,  H01L2924/181 ,  H01L2924/18162 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  Y10T29/49124 ,  H01L2924/00

摘要： In accordance with a method for forming an interposer, a fill hole is formed in a first side of a substrate and a cavity is formed in a second side. The cavity is in fluidic communication with the fill hole. A plurality of posts is formed in the cavity, and an encapsulant is injected through the fill hole into the cavity to encapsulate the plurality of posts. In accordance with a method of thermal management, an electronic component and a heat sink are disposed on opposing sides of an interposer that includes a plurality of encapsulated posts.

摘要翻译： 根据用于形成插入件的方法，在基板的第一侧中形成填充孔，并且在第二侧形成空腔。 空腔与填充孔流体连通。 在空腔中形成多个柱，并且通过填充孔将密封剂注入空腔中以封装多个柱。 根据热管理的方法，电子部件和散热器布置在包括多个密封柱的插入件的相对侧上。

公开(公告)号：US20110294306A1

公开(公告)日：2011-12-01

申请号：US13207304

申请日：2011-08-10

申请人： Francois J. Henley ,  Nathan W. Cheung

发明人： Francois J. Henley ,  Nathan W. Cheung

IPC分类号： H01L21/263

CPC分类号： H01L21/187 ,  B81C1/0038 ,  B81C2201/0191 ,  B81C2201/0192 ,  H01L21/2007 ,  H01L21/2236 ,  H01L21/26506 ,  H01L21/2658 ,  H01L21/304 ,  H01L21/7624 ,  H01L21/76254 ,  H01L21/7813 ,  Y10S117/915 ,  Y10S156/93 ,  Y10S438/974 ,  Y10S438/977 ,  Y10T156/11 ,  Y10T156/1158 ,  Y10T156/19 ,  Y10T428/21 ,  Y10T428/24893 ,  Y10T428/249956

摘要： A method for forming a multi-material thin film includes providing a multi-material donor substrate comprising single crystal silicon and an overlying film comprising GaN or SiC. Energetic particles are introduced through a surface of the multi-material donor substrate to a selected depth within the single crystal silicon. The method includes providing energy to a selected region of the donor substrate to initiate a controlled cleaving action in the donor substrate. Then, a cleaving action is made using a propagating cleave front to free a multi-material film from a remaining portion of the donor substrate, the multi-material film comprising single crystal silicon and the overlying film.

摘要翻译： 一种用于形成多材料薄膜的方法包括提供包括单晶硅的多材料供体衬底和包括GaN或SiC的上覆膜。 能量粒子通过多材料供体衬底的表面引入单晶硅内的选定深度。 该方法包括向施主衬底的选定区域提供能量，以在施主衬底中开始受控的切割作用。 然后，使用传播劈裂前端从施主衬底的剩余部分释放多材料膜，所述多材料膜包括单晶硅和上覆膜。

公开(公告)号：US08012852B2

公开(公告)日：2011-09-06

申请号：US12789361

申请日：2010-05-27

申请人： Francois J. Henley ,  Nathan W. Cheung

发明人： Francois J. Henley ,  Nathan W. Cheung

IPC分类号： H01L21/30

CPC分类号： H01L21/187 ,  B81C1/0038 ,  B81C2201/0191 ,  B81C2201/0192 ,  H01L21/2007 ,  H01L21/2236 ,  H01L21/26506 ,  H01L21/304 ,  H01L21/7624 ,  H01L21/76254 ,  H01L21/7813 ,  Y10S117/915 ,  Y10S156/93 ,  Y10S438/974 ,  Y10S438/977 ,  Y10T156/11 ,  Y10T156/1158 ,  Y10T156/19 ,  Y10T428/21 ,  Y10T428/24893 ,  Y10T428/249956

摘要： A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define a donor substrate material (12) above the selected depth. An energy source is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.

摘要翻译： 一种用于从供体衬底（10）形成材料（12）的膜的技术。 该技术具有将能量粒子（22）通过供体衬底（10）的表面引入到表面下方的选定深度（20）的步骤，其中颗粒具有相对较高的浓度以限定施主衬底材料（12） 高于所选深度。 能量源被引导到供体基底的选定区域，以在所选择的深度（20）处引发基底（10）的受控切割作用，因此，所述切割动作提供了扩张切割前沿，从而将供体材料从剩余的 部分供体基质。

公开(公告)号：US07927904B2

公开(公告)日：2011-04-19

申请号：US12651561

申请日：2010-01-04

申请人： Luc Ouellet ,  Stephane Martel

发明人： Luc Ouellet ,  Stephane Martel

IPC分类号： H01L21/8238

CPC分类号： B81C1/00071 ,  B81B2201/058 ,  B81B2203/0338 ,  B81C2201/0191 ,  B82Y30/00 ,  G03F7/0752 ,  G03F7/165 ,  Y10T428/24802

摘要： A MEMS device is manufactured by first forming a self-aligned monolayer (SAM) on a carrier wafer. Next, a first polymer layer is formed on the self-aligned monolayer. The first polymer layer is patterned form a microchannel cover, which is then bonded to a patterned second polymer layer on a device wafer to form microchannels. The carrier wafer is then released from the first polymer layer.

摘要翻译： 通过首先在载体晶片上形成自对准单层（SAM）来制造MEMS器件。 接下来，在自对准单层上形成第一聚合物层。 将第一聚合物层图案化成微通道盖，然后将其与装置晶片上的图案化的第二聚合物层结合以形成微通道。 然后从第一聚合物层释放载体晶片。

公开(公告)号：US20100143726A1

公开(公告)日：2010-06-10

申请号：US12595314

申请日：2008-04-11

申请人： Armin Gölzhäuser ,  Christoph Nottbohm ,  André Beyer

发明人： Armin Gölzhäuser ,  Christoph Nottbohm ,  André Beyer

IPC分类号： B32B38/10 ,  C08G77/14 ,  C08G75/04 ,  B32B9/00

CPC分类号： B05D1/283 ,  B81C1/0038 ,  B81C2201/0191 ,  B82Y30/00 ,  B82Y40/00

摘要： The invention relates to a method for transferring a nano-layer (1) from a first substrate (5, 105) to a second substrate (30, 130), wherein the nano-layer (1) comprises a self-aggregating monolayer with cross-linked phenyl units and/or a mono-atomic graphite layer (graphene), wherein the method comprises the following steps: a. applying a transfer medium (20, 120) onto nano-layer (1), wherein in this step or afterwards the transfer medium (20, 120) is transformed from a liquid or gaseous phase in a solid phase; b. separating the transfer medium (20, 120) and the nano-layer (1) from the first substrate (5, 105); and c. applying the transfer medium (20, 120) and the nano-layer (1) onto the second substrate (30, 130); and d. removing the transfer medium (20, 120).

摘要翻译： 本发明涉及一种将纳米层（1）从第一衬底（5,105）转移到第二衬底（30,130）的方法，其中所述纳米层（1）包括具有交叉的自聚集单层 连接的苯基单元和/或单原子石墨层（石墨烯），其中该方法包括以下步骤：a。 将转印介质（20,120）施加到纳米层（1）上，其中在该步骤中或之后，转移介质（20,120）从固相中的液相或气相转化; b。 从所述第一基板（5,105）分离所述转印介质（20,120）和所述纳米层（1）; 和c。 将所述转印介质（20,120）和所述纳米层（1）施加到所述第二基板（30,130）上; 和d。 去除所述转印介质（20,120）。