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    COMPOSITE ACTIVE MOLDS AND METHODS OF MAKING ARTICLES OF SEMICONDUCTING MATERIAL
    4.
    发明申请
    COMPOSITE ACTIVE MOLDS AND METHODS OF MAKING ARTICLES OF SEMICONDUCTING MATERIAL 审中-公开
    复合材料的主要成分及制备方法

    公开(公告)号：US20120299218A1

    公开(公告)日：2012-11-29

    申请号：US13117440

    申请日：2011-05-27

    申请人： Glen Bennett Cook ,  Prantik Mazumder ,  Balram Suman ,  Natesan Venkataraman

    发明人： Glen Bennett Cook ,  Prantik Mazumder ,  Balram Suman ,  Natesan Venkataraman

    IPC分类号： B28B1/38 ,  B28B7/42

    CPC分类号： C30B15/007 ,  C30B15/36 ,  C30B29/06

    摘要： The disclosure relates to a substrate mold comprising a shell material having an external surface configured to engage with molten semiconducting material, and an internal surface configured as a thermal transfer surface to transfer heat therethrough, and a core defined within the shell material and configured to remove heat from the shell material through the thermal transfer surface of the shell material. The substrate mold is configured to be immersed into the molten semiconducting material, and the external surface of the shell material is configured to have solidified molten semiconducting material formed thereon.

    摘要翻译： 本公开涉及一种基材模具，其包括壳体材料，该外壳材料具有被配置为与熔融半导体材料接合的外表面，以及被配置为热转印表面以传递热量的内表面，以及限定在外壳材料内的构造物， 外壳材料通过外壳材料的热传递表面的热量。 衬底模具被配置为浸入熔融半导体材料中，并且外壳材料的外表面被配置为具有在其上形成的凝固的熔融半导体材料。

    Method of making an article of semiconducting material
    6.
    发明授权
    Method of making an article of semiconducting material 失效
    制造半导体材料制品的方法

    公开(公告)号：US08480803B2

    公开(公告)日：2013-07-09

    申请号：US12609987

    申请日：2009-10-30

    申请人： Glen Bennett Cook ,  Prantik Mazumder ,  Balram Suman ,  Christopher Scott Thomas

    发明人： Glen Bennett Cook ,  Prantik Mazumder ,  Balram Suman ,  Christopher Scott Thomas

    IPC分类号： C30B11/14

    CPC分类号： C30B15/007 ,  C30B19/062 ,  C30B29/06

    摘要： A method of making an article of a semiconducting material involves withdrawing from a melt of molten semiconducting material a solid mold having already formed on an external surface of the mold a solid layer of the semiconducting material. During the act of withdrawal, one or more of a temperature, a force, and a relative rate of withdrawal are controlled in order to achieve one or more desired attributes in a solid overlayer of semiconductor material that is formed over the solid layer during the withdrawal.

    摘要翻译： 制造半导体材料的方法包括从熔融半导体材料的熔体中取出已经在模具的外表面上形成半导体材料的固体层的固体模具。 在退出动作期间，控制一个或多个温度，力和相对退出速率，以便在退出期间在固体层上形成的半导体材料的固体覆层中实现一个或多个期望属性 。

    METHOD OF MAKING AN ARTICLE OF SEMICONDUCTING MATERIAL
    7.
    发明申请
    METHOD OF MAKING AN ARTICLE OF SEMICONDUCTING MATERIAL 失效
    制造半导体材料的方法

    公开(公告)号：US20110101281A1

    公开(公告)日：2011-05-05

    申请号：US12609987

    申请日：2009-10-30

    申请人： Glen Bennett Cook ,  Prantik Mazumder ,  Balram Suman ,  Christopher Scott Thomas

    发明人： Glen Bennett Cook ,  Prantik Mazumder ,  Balram Suman ,  Christopher Scott Thomas

    IPC分类号： H01B1/00 ,  B28B1/00

    CPC分类号： C30B15/007 ,  C30B19/062 ,  C30B29/06

    摘要： A method of making an article of a semiconducting material involves withdrawing from a melt of molten semiconducting material a solid mold having already formed on an external surface of the mold a solid layer of the semiconducting material. During the act of withdrawal, one or more of a temperature, a force, and a relative rate of withdrawal are controlled in order to achieve one or more desired attributes in a solid overlayer of semiconductor material that is formed over the solid layer during the withdrawal.

    摘要翻译： 制造半导体材料的方法包括从熔融半导体材料的熔体中取出已经在模具的外表面上形成半导体材料的固体层的固体模具。 在退出动作期间，控制一个或多个温度，力和相对退出速率，以便在退出期间在固体层上形成的半导体材料的固体覆层中实现一个或多个期望属性 。

    MOLD THERMOPHYSICAL PROPERTIES FOR THICKNESS UNIFORMITY OPTIMIZATION OF EXOCAST SHEET
    8.
    发明申请
    MOLD THERMOPHYSICAL PROPERTIES FOR THICKNESS UNIFORMITY OPTIMIZATION OF EXOCAST SHEET 审中-公开
    模具厚度均匀性优化的热塑性物理特性

    公开(公告)号：US20130052802A1

    公开(公告)日：2013-02-28

    申请号：US13214366

    申请日：2011-08-22

    申请人： Glen Bennett Cook ,  Prantik Mazumder ,  Balram Suman

    发明人： Glen Bennett Cook ,  Prantik Mazumder ,  Balram Suman

    IPC分类号： H01L21/20 ,  B29C33/38

    CPC分类号： C30B29/06 ,  C30B11/002 ,  C30B15/007 ,  C30B19/12

    摘要： The disclosure relates to substrate molds with variable thermal mass. The disclosure relates to substrate molds comprising refractory materials having a leading edge and a trailing edge, wherein the substrate mold has a graded thermal mass comprising a leading edge thermal mass (Mt(lead)) and a trailing edge thermal mass (Mt(trail)), wherein Mt(lead) is less than Mt(trail). The disclosure also relates to methods of making articles of semiconducting material and methods of minimizing total thickness variation in articles of semiconducting material, said methods comprising using the molds disclosed.

    摘要翻译： 本公开涉及具有可变热质量的基底模具。 本公开涉及包括具有前缘和后缘的耐火材料的基底模具，其中所述基底模具具有包括前缘热质（Mt（铅））和后缘热质（Mt（线））的分级热质， ），其中Mt（铅）小于Mt（trail）。 本公开还涉及制造半导体材料的方法和使半导体材料制品中的总厚度变化最小化的方法，所述方法包括使用所公开的模具。

    MOLD SHAPE TO OPTIMIZE THICKNESS UNIFORMITY OF SILICON FILM
    9.
    发明申请
    MOLD SHAPE TO OPTIMIZE THICKNESS UNIFORMITY OF SILICON FILM 审中-公开
    模具形状优化硅膜厚度均匀性

    公开(公告)号：US20120027996A1

    公开(公告)日：2012-02-02

    申请号：US12844305

    申请日：2010-07-27

    申请人： Glen Bennett Cook ,  Prantik Mazumder ,  Balram Suman

    发明人： Glen Bennett Cook ,  Prantik Mazumder ,  Balram Suman

    IPC分类号： B29C41/14

    CPC分类号： H01L31/182 ,  C30B15/007 ,  C30B15/06 ,  C30B29/06 ,  Y02E10/546 ,  Y02P70/521 ,  Y10T428/24479

    摘要： A method of making a solid layer of a semiconducting material involves selecting a mold having a leading edge thickness and a different trailing edge thickness such that in respective plots of solid layer thickness versus effective submersion time for submersion of the leading and trailing edges into molten semiconducting material, a thickness of the solid layer adjacent to the leading and trailing edges are substantially equal. The mold is submersed into and withdrawn from the molten semiconducting material to form a solid layer of semiconducting material over an external surface of the mold.

    摘要翻译： 制造半导体材料的固体层的方法包括选择具有前缘厚度和不同后缘厚度的模具，使得在固体层厚度相对于有效浸入时间的各个图中，将浸入前缘和后缘的熔融半导体 与前缘和后缘相邻的固体层的厚度基本相等。 模具浸入熔融半导体材料中并从熔融半导体材料中取出，以在模具的外表面上形成半导体材料的固体层。