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公开(公告)号：US20240234498A9
公开(公告)日：2024-07-11
申请号：US17969768
申请日：2022-10-20
发明人： Xinshu Cai , Shyue Seng Tan , Vibhor Jain , John J. Pekarik
CPC分类号： H01L29/0653 , H01L29/0847 , H01L29/7825
摘要： Structures for a junction field-effect transistor and methods of forming a structure for a junction field-effect transistor. The structure comprises a first gate on a top surface of a semiconductor substrate, a second gate beneath the top surface of the semiconductor substrate, and a channel region in the semiconductor substrate. The first gate is positioned between a source and a drain, and the channel region positioned between the first gate and the second gate.
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公开(公告)号：US20230129914A1
公开(公告)日：2023-04-27
申请号：US17509611
申请日：2021-10-25
发明人： Xinshu Cai , Shyue Seng Tan , Vibhor Jain , John J. Pekarik , Kien Seen Daniel Chong , Yung Fu Chong , Judson R. Holt , Qizhi Liu , Kenneth J. Stein
IPC分类号： H01L29/737 , H01L29/10 , H01L29/45 , H01L29/66
摘要： The present disclosure relates to semiconductor structures and, more particularly, to transistor with wrap-around extrinsic base and methods of manufacture. The structure includes: a substrate; a collector region within the substrate; an emitter region over the substrate and which comprises silicon based material; an intrinsic base; and an extrinsic base overlapping the emitter region and the intrinsic base; an extrinsic base overlapping the emitter region and the intrinsic base; and an inverted “T” shaped spacer which separates the emitter region from the extrinsic base and the collector region from the emitter region.
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公开(公告)号：US20200295165A1
公开(公告)日：2020-09-17
申请号：US16299860
申请日：2019-03-12
IPC分类号： H01L29/737 , H01L29/66 , H01L29/06 , H01L21/768 , H01L29/165 , H01L23/528
摘要： Transistor-based sensors and fabrication methods for a transistor-based sensor. A semiconductor layer is arranged over a substrate, and an interconnect structure is arranged over the semiconductor layer and the substrate. The semiconductor layer includes first sections composed of a semiconductor material, second sections composed of the semiconductor material, and cavities. The first sections have an alternating arrangement with the second sections in a lateral direction. The semiconductor material of the first sections is polycrystalline, and the semiconductor material of the second sections is single-crystal. First and second openings each extend in a vertical direction through the metallization levels of the interconnect structure to the semiconductor layer or through the substrate to the semiconductor layer. The first opening defines a first fluid inlet coupled to the cavities, and the second opening defines a first fluid outlet coupled to the cavities.
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公开(公告)号：US12107124B2
公开(公告)日：2024-10-01
申请号：US17559085
申请日：2021-12-22
IPC分类号： H01L29/10 , H01L29/66 , H01L29/735 , H01L29/739
CPC分类号： H01L29/1004 , H01L29/6625 , H01L29/66325 , H01L29/735 , H01L29/7393
摘要： The present disclosure relates to semiconductor structures and, more particularly, to bipolar transistors and methods of manufacture. The structure includes: an intrinsic base region; an emitter region above the intrinsic base region; a collector region under the intrinsic base region; and an extrinsic base region comprising metal material, and which surrounds the intrinsic base region and the emitter region.
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公开(公告)号：US20240136395A1
公开(公告)日：2024-04-25
申请号：US17969768
申请日：2022-10-19
发明人： Xinshu Cai , Shyue Seng Tan , Vibhor Jain , John J. Pekarik
CPC分类号： H01L29/0653 , H01L29/0847 , H01L29/7825
摘要： Structures for a junction field-effect transistor and methods of forming a structure for a junction field-effect transistor. The structure comprises a first gate on a top surface of a semiconductor substrate, a second gate beneath the top surface of the semiconductor substrate, and a channel region in the semiconductor substrate. The first gate is positioned between a source and a drain, and the channel region positioned between the first gate and the second gate.
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公开(公告)号：US20240006517A1
公开(公告)日：2024-01-04
申请号：US18370001
申请日：2023-09-19
发明人： Xinshu Cai , Shyue Seng Tan , Vibhor Jain , John J. Pekarik , Kien Seen Daniel Chong , Yung Fu Chong , Judson R. Holt , Qizhi Liu , Kenneth J. Stein
IPC分类号： H01L29/737 , H01L29/66 , H01L29/45 , H01L29/10
CPC分类号： H01L29/7371 , H01L29/66242 , H01L29/45 , H01L29/1004
摘要： The present disclosure relates to semiconductor structures and, more particularly, to transistor with wrap-around extrinsic base and methods of manufacture. The structure includes: a substrate; a collector region within the substrate; an emitter region over the substrate and which comprises silicon based material; an intrinsic base; and an extrinsic base overlapping the emitter region and the intrinsic base; an extrinsic base overlapping the emitter region and the intrinsic base; and an inverted “T” shaped spacer which separates the emitter region from the extrinsic base and the collector region from the emitter region.
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公开(公告)号：US20230127768A1
公开(公告)日：2023-04-27
申请号：US17509604
申请日：2021-10-25
发明人： Xinshu Cai , Shyue Seng Tan , Vibhor Jain , John J. Pekarik , Kien Seen Daniel Chong , Yung Fu Chong , Judson R. Holt , Qizhi Liu , Kenneth J. Stein
IPC分类号： H01L29/737 , H01L29/10 , H01L29/45 , H01L29/66
摘要： The present disclosure relates to semiconductor structures and, more particularly, to transistor with wrap-around extrinsic base and methods of manufacture. The structure includes: a substrate; a collector region within the substrate; an emitter region over the substrate and which comprises mono-crystal silicon based material; an intrinsic base under the emitter region and comprising semiconductor material; and an extrinsic base surrounding the emitter and over the intrinsic base.
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公开(公告)号：US10530334B2
公开(公告)日：2020-01-07
申请号：US15976597
申请日：2018-05-10
摘要： Methods of forming a shear-mode acoustic wave filter on V-shaped grooves of a [100] crystal orientation Si layer over a substrate and the resulting devices are provided. Embodiments include forming a set of V-shaped grooves in a [100] crystal orientation Si layer over a substrate; and forming a shear-mode acoustic wave filter over the V-shaped grooves, the shear-mode acoustic wave filter including a first metal layer, a thin-film piezoelectric layer, and a second metal layer, wherein the second metal layer is an IDT pattern or a sheet.
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公开(公告)号：US11855195B2
公开(公告)日：2023-12-26
申请号：US17509604
申请日：2021-10-25
发明人： Xinshu Cai , Shyue Seng Tan , Vibhor Jain , John J. Pekarik , Kien Seen Daniel Chong , Yung Fu Chong , Judson R. Holt , Qizhi Liu , Kenneth J. Stein
IPC分类号： H01L29/737 , H01L29/66 , H01L29/45 , H01L29/10
CPC分类号： H01L29/7371 , H01L29/1004 , H01L29/45 , H01L29/66242
摘要： The present disclosure relates to semiconductor structures and, more particularly, to transistor with wrap-around extrinsic base and methods of manufacture. The structure includes: a substrate; a collector region within the substrate; an emitter region over the substrate and which comprises mono-crystal silicon based material; an intrinsic base under the emitter region and comprising semiconductor material; and an extrinsic base surrounding the emitter and over the intrinsic base.
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公开(公告)号：US10957787B2
公开(公告)日：2021-03-23
申请号：US16299860
申请日：2019-03-12
IPC分类号： H01L29/165 , H01L29/737 , H01L29/66 , H01L29/06 , H01L23/528 , H01L21/768 , G01N27/414
摘要： Transistor-based sensors and fabrication methods for a transistor-based sensor. A semiconductor layer is arranged over a substrate, and an interconnect structure is arranged over the semiconductor layer and the substrate. The semiconductor layer includes first sections composed of a semiconductor material, second sections composed of the semiconductor material, and cavities. The first sections have an alternating arrangement with the second sections in a lateral direction. The semiconductor material of the first sections is polycrystalline, and the semiconductor material of the second sections is single-crystal. First and second openings each extend in a vertical direction through the metallization levels of the interconnect structure to the semiconductor layer or through the substrate to the semiconductor layer. The first opening defines a first fluid inlet coupled to the cavities, and the second opening defines a first fluid outlet coupled to the cavities.
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