公开(公告)号：US20130207179A1

公开(公告)日：2013-08-15

申请号：US13803091

申请日：2013-03-14

Applicant: GlobalFoundries Singapore Pte. Ltd.

Inventor： Da-Wei LAI ,  Handoko Linewih ,  Ying-Chang Lin

IPC: H01L27/02

CPC classification number: H01L27/0266 ,  H01L27/027 ,  H01L29/0653 ,  H01L29/0847 ,  H01L29/7835

Abstract: A device which includes a substrate defined with a device region with an ESD protection circuit having at least first and second transistors is disclosed. Each of the transistors includes a gate having first and second sides, a first diffusion region in the device region adjacent to the first side of the gate, a second diffusion region in the device region displaced away from the second side of the gate, and a drift isolation region disposed between the gate and the second diffusion region. A first device well encompasses the device region and a second device well is disposed within the first device well. The device also includes a drift well which encompasses the second diffusion region. Edges of the drift well do not extend below the gate and is away from a channel region. A drain well is disposed under the second diffusion region and within the drift well.

Abstract translation: 公开了一种装置，其包括用至少具有第一和第二晶体管的ESD保护电路的器件区限定的衬底。 每个晶体管包括具有第一和第二侧的栅极，与栅极的第一侧相邻的器件区域中的第一扩散区域，远离栅极的第二侧移位的器件区域中的第二扩散区域，以及 漂移隔离区域设置在栅极和第二扩散区域之间。 第一装置阱包围装置区域，第二装置井设置在第一装置井内。 该装置还包括包围第二扩散区域的漂移阱。 漂移井的边缘不延伸到门下方并远离通道区域。 排水井设置在第二扩散区域下方和漂移井内。

公开(公告)号：US08853784B2

公开(公告)日：2014-10-07

申请号：US13737964

申请日：2013-01-10

Applicant: GLOBALFOUNDRIES Singapore Pte. Ltd.

Inventor： Da-Wei Lai ,  Handoko Linewih ,  Ying-Chang Lin

IPC: H01L23/62 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L29/78 ,  H01L27/0266 ,  H01L29/0653 ,  H01L29/0696 ,  H01L29/0847 ,  H01L29/1095 ,  H01L29/7816

Abstract: A device having a substrate defined with a device region which includes an ESD protection circuit is disclosed. The ESD protection circuit has first and second transistors. A transistor includes a gate having first and second sides, a first diffusion region in the device region adjacent to the first side of the gate, and a second diffusion region in the device region displaced away from the second side of the gate. The first and second diffusion regions include dopants of a first polarity type. The device includes a first device well which encompasses the device region and second device wells which are disposed within the first device well. A well contact is coupled to the second device wells. The well contact surrounds the gates of the transistors and abuts the first diffusion regions of the transistors.

Abstract translation: 公开了一种具有由包括ESD保护电路的器件区限定的衬底的器件。 ESD保护电路具有第一和第二晶体管。 晶体管包括具有第一和第二侧的栅极，与栅极的第一侧相邻的器件区域中的第一扩散区域以及远离栅极的第二侧移位的器件区域中的第二扩散区域。 第一和第二扩散区域包括第一极性类型的掺杂剂。 该装置包括包围装置区域的第一装置井和设置在第一装置井内的第二装置井。 井接触耦合到第二设备井。 阱接触围绕晶体管的栅极并且邻接晶体管的第一扩散区域。

公开(公告)号：US08847318B2

公开(公告)日：2014-09-30

申请号：US13803091

申请日：2013-03-14

Applicant: GLOBALFOUNDRIES Singapore Pte. Ltd.

Inventor： Da-Wei Lai ,  Handoko Linewih ,  Ying-Chang Lin

IPC: H01L23/62 ,  H01L29/66 ,  H01L27/02

CPC classification number: H01L27/0266 ,  H01L27/027 ,  H01L29/0653 ,  H01L29/0847 ,  H01L29/7835

Abstract: A device which includes a substrate defined with a device region with an ESD protection circuit having at least first and second transistors is disclosed. Each of the transistors includes a gate having first and second sides, a first diffusion region in the device region adjacent to the first side of the gate, a second diffusion region in the device region displaced away from the second side of the gate, and a drift isolation region disposed between the gate and the second diffusion region. A first device well encompasses the device region and a second device well is disposed within the first device well. The device also includes a drift well which encompasses the second diffusion region. Edges of the drift well do not extend below the gate and is away from a channel region. A drain well is disposed under the second diffusion region and within the drift well.

Abstract translation: 公开了一种装置，其包括用至少具有第一和第二晶体管的ESD保护电路的器件区限定的衬底。 每个晶体管包括具有第一和第二侧的栅极，与栅极的第一侧相邻的器件区域中的第一扩散区域，远离栅极的第二侧移位的器件区域中的第二扩散区域，以及 漂移隔离区域设置在栅极和第二扩散区域之间。 第一装置阱包围装置区域，第二装置井设置在第一装置井内。 该装置还包括包围第二扩散区域的漂移阱。 漂移井的边缘不延伸到门下方并远离通道区域。 排水井设置在第二扩散区域下方和漂移井内。