公开(公告)号：US20210358865A1

公开(公告)日：2021-11-18

申请号：US16876532

申请日：2020-05-18

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Anton Tokranov ,  Kai Sun ,  Elizabeth Strehlow ,  James Mazza ,  David Pritchard ,  Heng Yang ,  Mohamed Rabie

IPC: H01L23/00 ,  H01L29/06 ,  H01L29/423 ,  H01L29/78 ,  H01L29/66

Abstract: An illustrative device disclosed herein includes a semiconductor substrate and a FinFET transistor device positioned above the semiconductor substrate, wherein the FinFET transistor device has a single active fin structure. The device also includes an electrically inactive dummy fin structure positioned adjacent the single active fin structure, wherein the electrically inactive dummy fin structure is electrically inactive with respect to electrical operation of the FinFET transistor having the single active fin.

公开(公告)号：US20240162090A1

公开(公告)日：2024-05-16

申请号：US17985487

申请日：2022-11-11

Applicant: GlobalFoundries U.S. Inc.

Inventor： James Mazza ,  David Pritchard ,  Romain Feuillette ,  Elizabeth Strehlow ,  Hongru Ren

IPC: H01L21/768 ,  H01L21/8238 ,  H01L23/522 ,  H01L23/528 ,  H01L27/092

CPC classification number: H01L21/76897 ,  H01L21/823871 ,  H01L23/5226 ,  H01L23/528 ,  H01L27/092

Abstract: Structures with features formed by self-aligned double patterning and methods of self-aligned multiple patterning. The structure comprises a first field-effect transistor including a first gate and a first protrusion projecting laterally from the first gate, and a second field-effect transistor including a second gate and a second protrusion projecting laterally from the second gate. The second gate and the second protrusion are spaced in a lateral direction from the first gate and the first protrusion. The structure further comprises a gate contact connecting the first protrusion of the first gate to the second protrusion the second gate.

公开(公告)号：US11276651B2

公开(公告)日：2022-03-15

申请号：US16876532

申请日：2020-05-18

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Anton Tokranov ,  Kai Sun ,  Elizabeth Strehlow ,  James Mazza ,  David Pritchard ,  Heng Yang ,  Mohamed Rabie

IPC: H01L23/00 ,  H01L29/06 ,  H01L29/66 ,  H01L29/423 ,  H01L29/78

Abstract: An illustrative device disclosed herein includes a semiconductor substrate and a FinFET transistor device positioned above the semiconductor substrate, wherein the FinFET transistor device has a single active fin structure. The device also includes an electrically inactive dummy fin structure positioned adjacent the single active fin structure, wherein the electrically inactive dummy fin structure is electrically inactive with respect to electrical operation of the FinFET transistor having the single active fin.