公开(公告)号：US20240072184A1

公开(公告)日：2024-02-29

申请号：US17895599

申请日：2022-08-25

Applicant: GlobalFoundries U.S. Inc.

Inventor： Ramsey HAZBUN ,  John ELLIS-MONAGHAN ,  Siva P. ADUSUMILLI ,  Rajendran KRISHNASAMY

IPC: H01L31/0352 ,  H01L31/18

CPC classification number: H01L31/035281 ,  H01L31/18 ,  H01L31/028

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to photodetectors and methods of manufacture. The structure includes: a trench structure in a semiconductor substrate; at least one fin structure comprising semiconductor material which extends from a bottom of the trench structure; a photodetector material within the trench structure and extends from the at least one fin structure; a first contact connected to and on a first side of the photodetector material; and a second contact connected to the semiconductor substrate on a second side of the photodetector material.