公开(公告)号：US20220352401A1

公开(公告)日：2022-11-03

申请号：US17863922

申请日：2022-07-13

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Rajendran KRISHNASAMY ,  Steven M. SHANK ,  John J. ELLIS-MONAGHAN ,  Ramsey HAZBUN

IPC: H01L31/0352 ,  H01L31/0232 ,  H01L31/18 ,  H01L31/103 ,  H01L31/028

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a photodiode with an integrated, light focusing elements and methods of manufacture. The structure includes: a trench photodiode comprising a domed structure; and a doped material on the domed structure, the doped material having a concave underside surface.

公开(公告)号：US20220352210A1

公开(公告)日：2022-11-03

申请号：US17306078

申请日：2021-05-03

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Mark D. LEVY ,  Siva P. ADUSUMILLI ,  Alvin J. JOSEPH ,  Ramsey HAZBUN

IPC: H01L27/12 ,  H01L21/762 ,  H01L21/8234 ,  H01L23/66

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to switches in a bulk substrate and methods of manufacture. The structure includes: at least one active device having a channel region of a first semiconductor material; a single air gap under the channel region of the at least one active device; and a second semiconductor material being coplanar with and laterally bounding at least one side of the single air gap, the second semiconductor material being different material than the first semiconductor material.

公开(公告)号：US20220115549A1

公开(公告)日：2022-04-14

申请号：US17065862

申请日：2020-10-08

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Rajendran KRISHNASAMY ,  Steven M. SHANK ,  John J. ELLIS-MONAGHAN ,  Ramsey HAZBUN

IPC: H01L31/0352 ,  H01L31/0232 ,  H01L31/028 ,  H01L31/103 ,  H01L31/18

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a photodiode with an integrated, light focusing elements and methods of manufacture. The structure includes: a trench photodiode comprising a domed structure; and a doped material on the domed structure, the doped material having a concave underside surface.

公开(公告)号：US20230187449A1

公开(公告)日：2023-06-15

申请号：US18104504

申请日：2023-02-01

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Mark D. LEVY ,  Siva P. ADUSUMILLI ,  Alvin J. JOSEPH ,  Ramsey HAZBUN

IPC: H01L27/12 ,  H01L21/762 ,  H01L23/66 ,  H01L21/8234

CPC classification number: H01L27/1207 ,  H01L21/76283 ,  H01L23/66 ,  H01L21/823481 ,  H01L2223/6605

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to switches in a bulk substrate and methods of manufacture. The structure includes: at least one active device having a channel region of a first semiconductor material; a single air gap under the channel region of the at least one active device; and a second semiconductor material being coplanar with and laterally bounding at least one side of the single air gap, the second semiconductor material being different material than the first semiconductor material.

公开(公告)号：US20210320217A1

公开(公告)日：2021-10-14

申请号：US16844606

申请日：2020-04-09

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Mark D. LEVY ,  Siva P. ADUSUMILLI ,  John J. ELLIS-MONAGHAN ,  Vibhor JAIN ,  Ramsey HAZBUN ,  Pernell DONGMO ,  Cameron E. LUCE ,  Steven M. SHANK ,  Rajendran KRISHNASAMY

IPC: H01L31/107 ,  H01L31/0376 ,  H01L31/028 ,  H01L31/18

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to an avalanche photodiode and methods of manufacture. The structure includes: a substrate material having a trench with sidewalls and a bottom composed of the substrate material; a first semiconductor material lining the sidewalls and the bottom of the trench; a photosensitive semiconductor material provided on the first semiconductor material; and a third semiconductor material provided on the photosensitive semiconductor material.

公开(公告)号：US20240072184A1

公开(公告)日：2024-02-29

申请号：US17895599

申请日：2022-08-25

Applicant: GlobalFoundries U.S. Inc.

Inventor： Ramsey HAZBUN ,  John ELLIS-MONAGHAN ,  Siva P. ADUSUMILLI ,  Rajendran KRISHNASAMY

IPC: H01L31/0352 ,  H01L31/18

CPC classification number: H01L31/035281 ,  H01L31/18 ,  H01L31/028

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to photodetectors and methods of manufacture. The structure includes: a trench structure in a semiconductor substrate; at least one fin structure comprising semiconductor material which extends from a bottom of the trench structure; a photodetector material within the trench structure and extends from the at least one fin structure; a first contact connected to and on a first side of the photodetector material; and a second contact connected to the semiconductor substrate on a second side of the photodetector material.

公开(公告)号：US20230420596A1

公开(公告)日：2023-12-28

申请号：US17849285

申请日：2022-06-24

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： John J. ELLIS-MONAGHAN ,  Rajendran KRISHNASAMY ,  Siva P. ADUSUMILLI ,  Ramsey HAZBUN

IPC: H01L31/105 ,  H01L31/0288 ,  H01L31/18

CPC classification number: H01L31/105 ,  H01L31/0288 ,  H01L31/1804 ,  H01L31/0216

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a photodetector and methods of manufacture. The structure includes: a photodetector; and a semiconductor material on the photodetector, the semiconductor material comprising a first dopant type, a second dopant type and intrinsic semiconductor material separating the first dopant type from the second dopant type.

公开(公告)号：US20210091195A1

公开(公告)日：2021-03-25

申请号：US16732755

申请日：2020-01-02

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Judson R. HOLT ,  Vibhor JAIN ,  Qizhi LIU ,  Ramsey HAZBUN ,  Pernell DONGMO ,  John J. PEKARIK ,  Cameron E. LUCE

IPC: H01L29/423 ,  H01L29/66 ,  H01L29/737 ,  H01L29/08

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to heterojunction bipolar transistors and methods of manufacture. The structure includes: a sub-collector region in a substrate; a collector region above the sub-collector region, the collector region composed of semiconductor material; an intrinsic base region composed of intrinsic base material surrounded by the semiconductor material above the collector region; and an emitter region above the intrinsic base region.